Abstract:
The temperature dependence of the Hall coefficient of a single crystal of the p-Sb2Te2.9Se0.1 solid solution grown by the Czochralski technique is studied in the temperature range 77–450 K. The data on the Hall coefficient of the p-Sb2Te2.9Se0.1 are analyzed in combination with the data on the Seebeck and Nernst–Ettingshausen effects and the electrical conductivity with allowance for interband scattering. From an analysis of the temperature dependences of the four kinetic coefficients, it follows that, at T< 200 K, the experimental data are qualitatively and quantitatively described in terms of the one-band model. At higher temperatures, a complex structure of the valence band and the participation of the second-kind additional carriers (heavy holes) in the kinetic phenomena should be taken into account. It is shown that the calculations of the temperature dependences of the Seebeck and Hall coefficients performed in the two-band model agree with the experimental data with inclusion of the interband scattering when using the following parameters: effective masses of the density of states of light holes m∗d1≈ 0.5m0 (m0 is the free electron mass) and heavy holes m∗d2≈ 1.4m0, the energy gap between the main and the additional extremes of the valence band ΔEv≈ 0.14 eV that is weakly dependent on temperature.
Citation:
S. A. Nemov, N. M. Blagikh, A. A. Allahkhah, L. D. Ivanova, M. B. Dzhafarov, A. E. Demchenko, “Energy spectrum of holes in Sb2Te2.9Se0.1 solid solution according to the data on the transfer phenomena”, Fizika Tverdogo Tela, 58:11 (2016), 2208–2211; Phys. Solid State, 58:11 (2016), 2290–2293
\Bibitem{NemBlaAll16}
\by S.~A.~Nemov, N.~M.~Blagikh, A.~A.~Allahkhah, L.~D.~Ivanova, M.~B.~Dzhafarov, A.~E.~Demchenko
\paper Energy spectrum of holes in Sb$_{2}$Te$_{2.9}$Se$_{0.1}$ solid solution according to the data on the transfer phenomena
\jour Fizika Tverdogo Tela
\yr 2016
\vol 58
\issue 11
\pages 2208--2211
\mathnet{http://mi.mathnet.ru/ftt9790}
\elib{https://elibrary.ru/item.asp?id=27368827}
\transl
\jour Phys. Solid State
\yr 2016
\vol 58
\issue 11
\pages 2290--2293
\crossref{https://doi.org/10.1134/S1063783416110275}
Linking options:
https://www.mathnet.ru/eng/ftt9790
https://www.mathnet.ru/eng/ftt/v58/i11/p2208
This publication is cited in the following 6 articles:
A.A. Rulimov, V.V. Mishin, I.A. Shishov, S.A. Nemov, M. Jafarov, “Correlation between cross-section distribution of thermoelectric parameters of Sb2Te3-based material and its stress–strain state during hot extrusion”, Materials Today: Proceedings, 30 (2020), 742
S. A. Nemov, Yu. V. Ulashkevich, A. A. Rulimov, A. E. Demchenko, A. A. Allahkhah, I. V. Sveshnikov, M. B. Dzhafarov, “On the band structure of Bi$_{2}$Te$_{3}$”, Semiconductors, 53:5 (2019), 603–606
Sorush Niknamian, “Data Fast Transmission Method in Wireless Vehicle Ad-hoc Network”, J. Appl. Sci. Eng. Technol. Educ., 1:2 (2019), 149
S. A. Nemov, V. D. Andreeva, Yu. V. Ulashkevich, A. V. Povolotskiy, A. A. Allahkhah, “Specific features of the IR reflectance and Raman spectra of Sb$_{2}$Te$_{3-x}$Se$_{x}$ crystals”, Semiconductors, 52:10 (2018), 1317–1322
S. A. Nemov, Yu. V. Ulashkevich, A. A. Allahkhah, “Reflectance spectra of $p$-Bi$_{2}$Te$_{3}$ : Sn crystals in a wide IR region”, Semiconductors, 51:10 (2017), 1295–1299
S. A. Nemov, Yu. V. Ulashkevich, A. A. Allahkhah, M. B. Dzhafarov, “On the band structure of Sb$_{2}$Te$_{3-x}$Se$_{x}$ (0 $\le x\le$ 0.1): Kinetic and optical data”, Semiconductors, 51:8 (2017), 992–995