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XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Low Dimension Systems
AlGaN nanostructures with extremely high quantum yield at 300 K
A. A. Toropova, E. A. Shevchenkoa, T. V. Shubinaa, V. N. Zhmerika, D. V. Nechaeva, G. Pozinab, S. V. Ivanova a Ioffe Institute, St. Petersburg
b Linköping University, Department of Physics, Chemistry and Biology, Sweden
Abstract:
Theoretical optimization of a quantum well heterostructure based on AlGaN solid solutions is implemented in order to attain the maximum charge carrier activation energy and the maximum exciton binding energy at a radiation wavelength of $\sim$300 nm. An optimized structure sample with the radiative recombination dominating over the temperature range of 5 to 300 K and the room temperature internal quantum yield as high as 80% of the value measured at 5 K has been manufactured via plasma-assisted molecular beam epitaxy.
Citation:
A. A. Toropov, E. A. Shevchenko, T. V. Shubina, V. N. Zhmerik, D. V. Nechaev, G. Pozina, S. V. Ivanov, “AlGaN nanostructures with extremely high quantum yield at 300 K”, Fizika Tverdogo Tela, 58:11 (2016), 2180–2185; Phys. Solid State, 58:11 (2016), 2261–2266
Linking options:
https://www.mathnet.ru/eng/ftt9784 https://www.mathnet.ru/eng/ftt/v58/i11/p2180
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Statistics & downloads: |
Abstract page: | 19 | Full-text PDF : | 4 |
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