Abstract:
This paper presents the results of the investigation of the energy spectrum of electronic states due to trapping centers, the role of which in CuInAsS$_3$ is played by lattice defects. The results of the analysis of the thermally stimulated current curves of CuInAsS$_3$ demonstrate that the energy spectrum of trapping centers is localized under the bottom of the conduction band in the energy range $E_C$–(0.14–0.35) eV.
Citation:
E. M. Zobov, A. Yu. Mollaev, L. A. Saypulaeva, A. G. Alibekov, N. V. Melnikova, “Energy spectrum of electron trapping centers in CuInAsS$_3$”, Fizika Tverdogo Tela, 58:12 (2016), 2369–2371; Phys. Solid State, 58:12 (2016), 2457–2459