Analysis of the applicability of Ni, Cu, Au, Pt, and Pd nanoclusters for data recording

The applicability of individual Ni, Cu, Au, Pt, and Pd nanoclusters as data bits in next generation memory devices constructed on the phase-change carrier principle is studied. To this end, based on the modified tight-binding potential (TB–SMA), structure formation from the melt of nanoparticles of these metals to 10 nm in diameter was simulated by the molecular dynamics method. The effect of various crystallization conditions on the formation of the internal structures of Ni, Cu, Au, Pt, and Pd nanoclusters is studied. The stability boundaries of various crystalline isomers are analyzed. The obtained systematic features are compared for nanoparticles of copper, nickel, gold, platinum, and palladium of identical sizes. It is concluded that platinum nanoclusters of diameter $D>$ 8 nm are the best materials among studied metals for producing memory elements based on phase transitions.