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This article is cited in 2 scientific papers (total in 2 papers)
Magnetism
Competition between band and hopping carrier transport in Ge : Mn thin films
A. I. Dmitriev, L. I. Buravov Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
Abstract:
Regularities of hole transport and its correlation with percolation magnetism caused by localized carriers simultaneously involved in the formation of the magnetic and electrical properties of Ge: Mn thin films are investigated. It is established that at temperatures of $T>$ 22 K the activationless band carrier transport occurs in the Ge: Mn samples (2 at % Mn). At low temperatures, the hopping mechanism with a variable hopping length works.
Received: 02.08.2016
Citation:
A. I. Dmitriev, L. I. Buravov, “Competition between band and hopping carrier transport in Ge : Mn thin films”, Fizika Tverdogo Tela, 59:3 (2017), 523–527; Phys. Solid State, 59:3 (2017), 538–542
Linking options:
https://www.mathnet.ru/eng/ftt9644 https://www.mathnet.ru/eng/ftt/v59/i3/p523
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