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This article is cited in 5 scientific papers (total in 5 papers)
Semiconductors
Parametric resonance and photogalvanic currents in layered TlGaSe$_{2}$ crystals
A. P. Odrinskya, M.-H. Yu. Seyidovbc, T. G. Mamedovb, V. B. Alievab a Institute of Technical Acoustics, Academy of Sciences of Belarus, Vitebsk
b Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
c Department of Physics, Gebze Technical University, Gebze, Kocaeli, Turkey
Abstract:
The results of the phenomenological study of the abnormal photoresponse kinetics in layered TlGaSe$_{2}$ ferroelectric semiconductor have been discussed over the temperature range $T$ of $\sim$170–280 K corresponding to the paraelectric phase of crystal. Taking into account the alterations in the photoresponse kinetics temperature, the main mechanisms of anomalies caused by the spatial inhomogeneity of localized and nonlocalized charges in the bulk of the crystal have been assumed. The mechanism of parametric resonance is suggested to be favored by the photogalvanic currents in the crystal.
Received: 18.05.2016
Citation:
A. P. Odrinsky, M.-H. Yu. Seyidov, T. G. Mamedov, V. B. Alieva, “Parametric resonance and photogalvanic currents in layered TlGaSe$_{2}$ crystals”, Fizika Tverdogo Tela, 59:3 (2017), 447–452; Phys. Solid State, 59:3 (2017), 457–462
Linking options:
https://www.mathnet.ru/eng/ftt9633 https://www.mathnet.ru/eng/ftt/v59/i3/p447
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