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This article is cited in 3 scientific papers (total in 3 papers)
Semiconductors
Magnetic capacitance of the Gd$_{x}$Bi$_{1-x}$FeO$_{3}$ thin films
S. S. Aplesninab, V. V. Kretinina, A. M. Panasevichc, K. I. Yanushkevichc a M. F. Reshetnev Siberian State Aerospace University, Krasnoyarsk, Russia
b L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
c Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus
Abstract:
The capacitance, inductance, and dissipation factor of the Gd$_{x}$Bi$_{1-x}$FeO$_{3}$ films were measured in the temperature range of 100 K $<T<$ 800 K in magnetic fields of up to 8 kOe at frequencies of 0.1–100 kHz. The magnetic susceptibility maxima in the low-temperature region and dependences of the relaxation time and inductance on prehistory of the films cooled in zero and nonzero magnetic fields are established. The giant increase in magnetic capacitance in the external bias electric field is found. The results obtained are explained by the domain structure transformation in external electric and magnetic fields.
Received: 14.03.2016 Revised: 27.06.2016
Citation:
S. S. Aplesnin, V. V. Kretinin, A. M. Panasevich, K. I. Yanushkevich, “Magnetic capacitance of the Gd$_{x}$Bi$_{1-x}$FeO$_{3}$ thin films”, Fizika Tverdogo Tela, 59:4 (2017), 653–659; Phys. Solid State, 59:4 (2017), 667–673
Linking options:
https://www.mathnet.ru/eng/ftt9602 https://www.mathnet.ru/eng/ftt/v59/i4/p653
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