The role of specific features of the electronic structure in electrical resistivity of band ferromagnets Co$_{2}$Fe$Z$ ($Z$ = Al, Si, Ga, Ge, In, Sn, Sb)

The electrical resistivity $\rho(T)$ of the band ferromagnets Co$_{2}$Fe$Z$ ($Z$ = Al, Si, Ga, Ge, In, Sn, and Sb are $s$- and $p$-elements of Mendeleev’s Periodic Table) has been investigated in the temperature range 4.2 K $<T<$ 1100 K. It has been shown that the dependences $\rho(T)$ of these alloys in a magnetically ordered state at temperatures $T<T_C$ are predominantly determined by the specific features of the electronic spectrum in the vicinity of the Fermi level. The processes of charge carrier scattering affect the behavior of the electrical resistivity $\rho(T)$ only in the vicinity of the Curie temperature $T_C$ and above, as well as in the low-temperature range (at $T\ll T_C$).