Electron microscopic investigation of the kinetics of the layer and island crystallization of amorphous V$_{2}$O$_{3}$ films deposited by pulsed laser evaporation

An electron microscopic investigation was performed on the kinetics of the layer and island crystallization of amorphous V$_{2}$O$_{3}$ films deposited by pulsed laser evaporation of vanadium in an oxygen atmosphere. The crystallization was initiated by the action of an electron beam on an amorphous film in the column of a transmission electron microscope. The kinetic curves were plotted on the basis of a frame-by-frame analysis of the video recorded during the crystallization of the film. It was found that the layer crystallization of amorphous films is characterized by a quadratic dependence of the fraction of the crystalline phase $x$ on the time $t$, whereas the island crystallization is described by an exponential dependence of $x$ on $t$. The kinetic curves of island crystallization of amorphous films were analyzed on the basis of the $\alpha$-version of the Kolmogorov model. For each type of crystallization, there are specific values of the dimensionless relative length unit $\delta_0$, which is equal to the ratio of the characteristic length unit to the parameter characterizing the unit cell of the crystal. It was established that, for the layer crystallization, the relative length unit lies in the range $\delta_0\sim$4300–4700, whereas for the fine-grained island crystallization, it amounts to $\delta_0\sim$110.