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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductors
Galvanomagnetic properties of polycrystalline manganese selenide Gd$_{0.2}$Mn$_{0.8}$Se
O. B. Romanovaab, S. S. Aplesninab, A. M. Khar'kovb, A. N. Masyuginb, K. I. Yanushkevichc a L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
b M. F. Reshetnev Siberian State Aerospace University
c Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus
Abstract:
The electrical and galvanomagnetic properties of the Gd$_{0.2}$Mn$_{0.8}$Se solid solutions are investigated in zero magnetic field and in a field of 13 kOe in the temperature range of 80–400 K. The negative magnetoresistance below room temperature and hysteresis of the I–V characteristics are found. The change in the magnetoresistance sign and thermopower with increasing temperature is established. The carrier type is determined from the Hall constant; the difference between the thermopower and Hall coefficient signs at high temperatures is established. The experimental data are explained using the model of orbital ordering and spin-orbit interaction.
Received: 12.01.2017
Citation:
O. B. Romanova, S. S. Aplesnin, A. M. Khar'kov, A. N. Masyugin, K. I. Yanushkevich, “Galvanomagnetic properties of polycrystalline manganese selenide Gd$_{0.2}$Mn$_{0.8}$Se”, Fizika Tverdogo Tela, 59:7 (2017), 1290–1294; Phys. Solid State, 59:7 (2017), 1314–1318
Linking options:
https://www.mathnet.ru/eng/ftt9516 https://www.mathnet.ru/eng/ftt/v59/i7/p1290
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