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This article is cited in 5 scientific papers (total in 5 papers)
Semiconductors
Features of the electron density distribution in antimony telluride Sb$_{2}$Te$_{3}$
V. G. Orlovab, G. S. Sergeeva a National Research Centre "Kurchatov Institute", Moscow
b Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
Abstract:
Based on the results of electron density functional calculations of the electronic band structure of semiconductors Sb$_{2}$Te$_{3}$, Ge, Te, and semimetal Sb, the parameters of critical points in the electron density distribution (maxima, minima, and saddle points) in the lattices of the above materials are found. The data obtained are used to analyze the chemical bond nature in Sb$_{2}$Te$_{3}$.
Received: 21.12.2016
Citation:
V. G. Orlov, G. S. Sergeev, “Features of the electron density distribution in antimony telluride Sb$_{2}$Te$_{3}$”, Fizika Tverdogo Tela, 59:7 (2017), 1278–1285; Phys. Solid State, 59:7 (2017), 1302–1309
Linking options:
https://www.mathnet.ru/eng/ftt9514 https://www.mathnet.ru/eng/ftt/v59/i7/p1278
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