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This article is cited in 8 scientific papers (total in 8 papers)
Surface physics, thin films
Modification of the electronic structure of graphene by intercalation of iron and silicon atoms
I. I. Proninab, S. M. Dunaevskiicd, E. Yu. Lobanovaac, E. K. Mikhailenkoac a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Peter the Great St. Petersburg Polytechnic University
d The Petersburg Nuclear Physics Institute, The National Research Center "Kurchatov Institute"
Abstract:
The ab initio calculations of the electronic structure of low-dimensional graphene–iron–nickel and graphene–silicon–iron systems were carried out using the density functional theory. For the graphene–Fe–Ni(111) system, band structures for different spin projections and total densities of valence electrons are determined. The energy position of the Dirac cone caused by the $p_z$ states of graphene depends weakly on the number of iron layers intercalated into the interlayer gap between nickel and graphene. For the graphene–Si–Fe(111) system, the most advantageous positions of silicon atoms on iron are determined. The intercalation of silicon under graphene leads to a sharp decrease in the interaction of carbon atoms with the substrate and largely restores the electronic properties of free graphene.
Received: 17.04.2017
Citation:
I. I. Pronin, S. M. Dunaevskii, E. Yu. Lobanova, E. K. Mikhailenko, “Modification of the electronic structure of graphene by intercalation of iron and silicon atoms”, Fizika Tverdogo Tela, 59:10 (2017), 2037–2043; Phys. Solid State, 59:10 (2017), 2063–2069
Linking options:
https://www.mathnet.ru/eng/ftt9440 https://www.mathnet.ru/eng/ftt/v59/i10/p2037
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