|
This article is cited in 1 scientific paper (total in 1 paper)
Optical properties
Optical properties of bulk gallium nitride single crystals grown by chloride–hydride vapor-phase epitaxy
V. F. Agekyan, E. V. Borisov, A. Yu. Serov, N. G. Filosofov Saint Petersburg State University
Abstract:
A gallium nitride crystal 5 mm in thickness was grown by chloride–hydride vapor-phase epitaxy on a sapphire substrate, from which the crystal separated during cooling. At an early stage, a three-dimensional growth mode was implemented, followed by a switch to a two-dimensional mode. Spectra of exciton reflection, exciton luminescence, and Raman scattering are studied in several regions characteristic of the sample. Analysis of these spectra and comparison with previously obtained data for thin epitaxial GaN layers with a wide range of silicon doping enabled conclusions about the quality of the crystal lattice in these characteristic regions.
Received: 11.04.2017
Citation:
V. F. Agekyan, E. V. Borisov, A. Yu. Serov, N. G. Filosofov, “Optical properties of bulk gallium nitride single crystals grown by chloride–hydride vapor-phase epitaxy”, Fizika Tverdogo Tela, 59:12 (2017), 2392–2395; Phys. Solid State, 59:12 (2017), 2418–2422
Linking options:
https://www.mathnet.ru/eng/ftt9364 https://www.mathnet.ru/eng/ftt/v59/i12/p2392
|
Statistics & downloads: |
Abstract page: | 29 | Full-text PDF : | 9 |
|