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Fizika Tverdogo Tela, 2018, Volume 60, Issue 3, Pages 443–451
DOI: https://doi.org/10.21883/FTT.2018.03.45542.05D (Mi ftt9260) 		 
This article is cited in 17 scientific papers (total in 17 papers)

XIV International Conference ''Physics of Dielectrics'', St. Petersburg May 29-June 2, 2017
Phase transitions

Switching channel development dynamics in planar structures on the basis of vanadium dioxide

M. A. Belyaeva, P. P. Boriskova, A. A. Velichkoa, A. L. Pergamenta, V. V. Putrolaynena, D. V. Ryabokon'bc, G. B. Stefanovicha, V. I. Sysuna, S. D. Khaninbc

a Petrozavodsk State University
b Marshal of the Soviet Union Budennyi Military Academy of Communications, St. Petersburg, Russia
c Herzen State Pedagogical University of Russia, St. Petersburg
Full-text PDF (2009 kB) Citations (17)
DOI: https://doi.org/10.21883/FTT.2018.03.45542.05D
Abstract: The results of the experimental studies and numerical simulation of the switching channel development dynamics in planar structures on the basis of vanadium dioxide are reported. The obtained data on the variation of the temperature in the channel with time and of the current arisen after the pulsed load, and on the times of transition from the high-resistance to the low-resistance state and back are analyzed in order to determine the switching mechanism and to predict the functional characteristics of the switchable vanadium- oxide structures as promising materials for the creation of relaxation generators that can serve as prototypes of neural oscillators. It is shown that the switching behavior is associated with the metal–semiconductor phase transition in vanadium dioxide, which is stimulated by the emission of Joule heat.
Funding agency Grant number
Russian Science Foundation 16-19-00135
English version:
Physics of the Solid State, 2018, Volume 60, Issue 3, Pages 447–456
DOI: https://doi.org/10.1134/S1063783418030046
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. A. Belyaev, P. P. Boriskov, A. A. Velichko, A. L. Pergament, V. V. Putrolaynen, D. V. Ryabokon', G. B. Stefanovich, V. I. Sysun, S. D. Khanin, “Switching channel development dynamics in planar structures on the basis of vanadium dioxide”, Fizika Tverdogo Tela, 60:3 (2018), 443–451; Phys. Solid State, 60:3 (2018), 447–456
Citation in format AMSBIB
\Bibitem{BelBorVel18}
\by M.~A.~Belyaev, P.~P.~Boriskov, A.~A.~Velichko, A.~L.~Pergament, V.~V.~Putrolaynen, D.~V.~Ryabokon', G.~B.~Stefanovich, V.~I.~Sysun, S.~D.~Khanin
\paper Switching channel development dynamics in planar structures on the basis of vanadium dioxide
\jour Fizika Tverdogo Tela
\yr 2018
\vol 60
\issue 3
\pages 443--451
\mathnet{http://mi.mathnet.ru/ftt9260}
\crossref{https://doi.org/10.21883/FTT.2018.03.45542.05D}
\elib{https://elibrary.ru/item.asp?id=32739801}
\transl
\jour Phys. Solid State
\yr 2018
\vol 60
\issue 3
\pages 447--456
\crossref{https://doi.org/10.1134/S1063783418030046}
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  • https://www.mathnet.ru/eng/ftt/v60/i3/p443
    • This publication is cited in the following 17 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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