M. A. Belyaev, P. P. Boriskov, A. A. Velichko, A. L. Pergament, V. V. Putrolaynen, D. V. Ryabokon', G. B. Stefanovich, V. I. Sysun, S. D. Khanin, “Switching channel development dynamics in planar structures on the basis of vanadium dioxide”, Fizika Tverdogo Tela, 60:3 (2018), 443–451; Phys. Solid State, 60:3 (2018), 447

Fizika Tverdogo Tela

RUS ENG

JOURNALS PEOPLE ORGANISATIONS CONFERENCES SEMINARS VIDEO LIBRARY PACKAGE AMSBIB

JavaScript is disabled in your browser. Please switch it on to enable full functionality of the website

	General information
	Latest issue
	Archive

	Search papers
	Search references

	RSS
	Latest issue
	Current issues
	Archive issues
	What is RSS

Fizika Tverdogo Tela:
Year:
Volume:
Issue:
Page:
	Find

Personal entry:
Login:
Password:
	Save password
	Enter
	Forgotten password?
	Register

Fizika Tverdogo Tela, 2018, Volume 60, Issue 3, Pages 443–451
DOI: https://doi.org/10.21883/FTT.2018.03.45542.05D (Mi ftt9260)

This article is cited in 17 scientific papers (total in 17 papers)

XIV International Conference ''Physics of Dielectrics'', St. Petersburg May 29-June 2, 2017
Phase transitions

Switching channel development dynamics in planar structures on the basis of vanadium dioxide

M. A. Belyaev^a, P. P. Boriskov^a, A. A. Velichko^a, A. L. Pergament^a, V. V. Putrolaynen^a, D. V. Ryabokon'^bc, G. B. Stefanovich^a, V. I. Sysun^a, S. D. Khanin^bc

^a Petrozavodsk State University
^b Marshal of the Soviet Union Budennyi Military Academy of Communications, St. Petersburg, Russia
^c Herzen State Pedagogical University of Russia, St. Petersburg

Full-text PDF (2009 kB) Citations (17)

DOI: https://doi.org/10.21883/FTT.2018.03.45542.05D

Abstract: The results of the experimental studies and numerical simulation of the switching channel development dynamics in planar structures on the basis of vanadium dioxide are reported. The obtained data on the variation of the temperature in the channel with time and of the current arisen after the pulsed load, and on the times of transition from the high-resistance to the low-resistance state and back are analyzed in order to determine the switching mechanism and to predict the functional characteristics of the switchable vanadium- oxide structures as promising materials for the creation of relaxation generators that can serve as prototypes of neural oscillators. It is shown that the switching behavior is associated with the metal–semiconductor phase transition in vanadium dioxide, which is stimulated by the emission of Joule heat.

Funding agency	Grant number
Russian Science Foundation	16-19-00135

English version:
Physics of the Solid State, 2018, Volume 60, Issue 3, Pages 447–456
DOI: https://doi.org/10.1134/S1063783418030046

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: M. A. Belyaev, P. P. Boriskov, A. A. Velichko, A. L. Pergament, V. V. Putrolaynen, D. V. Ryabokon', G. B. Stefanovich, V. I. Sysun, S. D. Khanin, “Switching channel development dynamics in planar structures on the basis of vanadium dioxide”, Fizika Tverdogo Tela, 60:3 (2018), 443–451; Phys. Solid State, 60:3 (2018), 447–456

Citation in format AMSBIB

\Bibitem{BelBorVel18}

\by M.~A.~Belyaev, P.~P.~Boriskov, A.~A.~Velichko, A.~L.~Pergament, V.~V.~Putrolaynen, D.~V.~Ryabokon', G.~B.~Stefanovich, V.~I.~Sysun, S.~D.~Khanin

\paper Switching channel development dynamics in planar structures on the basis of vanadium dioxide

\jour Fizika Tverdogo Tela

\yr 2018

\vol 60

\issue 3

\pages 443--451

\mathnet{http://mi.mathnet.ru/ftt9260}

\crossref{https://doi.org/10.21883/FTT.2018.03.45542.05D}

\elib{https://elibrary.ru/item.asp?id=32739801}

\transl

\jour Phys. Solid State

\yr 2018

\vol 60

\issue 3

\pages 447--456

\crossref{https://doi.org/10.1134/S1063783418030046}

Linking options:

https://www.mathnet.ru/eng/ftt9260

https://www.mathnet.ru/eng/ftt/v60/i3/p443

This publication is cited in the following 17 articles:

Simiao Yang, Deli Li, Jiuchao Feng, Binchen Gong, Qing Song, Yue Wang, Zhen Yang, Yonghua Chen, Qi Chen, Wei Huang, “Secondary Order RC Sensor Neuron Circuit for Direct Input Encoding in Spiking Neural Network”, Adv Elect Materials, 2024
Mohammadreza Farjadian, Majid Shalchian, “Modeling and design of a Mott selector for a ReRAM-based non-volatile memory cell in a crossbar architecture”, J Comput Electron, 21:2 (2022), 535
Emile Haddad, Roman V. Kruzelecky, Piotr Murzionak, Wes Jamroz, Kamel Tagziria, Mohamed Chaker, Boris Ledrogoff, “Review of the VO2 smart material applications with emphasis on its use for spacecraft thermal control”, Front. Mater., 9 (2022)
Andrei Velichko, Vadim Putrolaynen, Maksim Belyaev, “Higher-order and long-range synchronization effects for classification and computing in oscillator-based spiking neural networks”, Neural Comput & Applic, 33:8 (2021), 3113
Mohammadreza Farjadian, Majid Shalchian, “Hybrid Electrothermal Model for Insulator-to- Metal Transition in VO2 Thin Films”, IEEE Trans. Electron Devices, 68:2 (2021), 704
Ali Mohamed, Osama Rayis, Advances in Intelligent Systems and Computing, 1197, Intelligent and Fuzzy Techniques: Smart and Innovative Solutions, 2021, 1031
M A Belyaev, A A Velichko, “Capacitorless model of a VO2 oscillator”, IOP Conf. Ser.: Mater. Sci. Eng., 734:1 (2020), 012151
A A Velichko, M A Belyaev, D V Ryabokon, S D Khanin, “The non-capacitor model of leaky integrate-and-fire VO2 neuron with the thermal mechanism of the membrane potential”, J. Phys.: Conf. Ser., 1399:2 (2019), 022046
Velichko, “A Method for Evaluating Chimeric Synchronization of Coupled Oscillators and Its Application for Creating a Neural Network Information Converter”, Electronics, 8:7 (2019), 756
P P Boriskov, A A Velichko, “Inductively coupled burst oscillators in neural network information processing systems”, J. Phys.: Conf. Ser., 1399:3 (2019), 033051
P. P. Boriskov, M. A. Belyaev, A. A. Velichko, “Stochastic Synchronization and the Signal-to-Noise Ratio in an Oscillator with a Film VO2 Switch”, J. Commun. Technol. Electron., 64:7 (2019), 705
V.P. Prasadam, N. Bahlawane, F. Mattelaer, G. Rampelberg, C. Detavernier, L. Fang, Y. Jiang, K. Martens, I.P. Parkin, I. Papakonstantinou, “Atomic layer deposition of vanadium oxides: process and application review”, Materials Today Chemistry, 12 (2019), 396
Petr Boriskov, Andrei Velichko, “Switch Elements with S-Shaped Current-Voltage Characteristic in Models of Neural Oscillators”, Electronics, 8:9 (2019), 922
V. R. Kolbunov, A. I. Ivon, A. V. Vasheruk, “Kinetics of current in glass-ceramics on the base of vanadium dioxide”, J Electroceram, 43:1-4 (2019), 34
Belyaev, Velichko, “A Spiking Neural Network Based on the Model of VO2—Neuron”, Electronics, 8:10 (2019), 1065
Andrei Velichko, Maksim Belyaev, Petr Boriskov, “A Model of an Oscillatory Neural Network with Multilevel Neurons for Pattern Recognition and Computing”, Electronics, 8:1 (2019), 75
Andrei Velichko, Maksim Belyaev, Vadim Putrolaynen, Petr Boriskov, “A New Method of the Pattern Storage and Recognition in Oscillatory Neural Networks Based on Resistive Switches”, Electronics, 7:10 (2018), 266

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

Statistics & downloads:
Abstract page:	72
Full-text PDF :	35

Что такое QR-код?

Registration to the website

Logotypes