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This article is cited in 5 scientific papers (total in 5 papers)
Semiconductors
Comparative study of the lateral photovoltaic effect in Fe$_{3}$O$_{4}$/SiO$_{2}$/$n$-Si and Fe$_{3}$O$_{4}$/SiO$_{2}$/$p$-Si structures
T. A. Pisarenkoab, V. V. Balashevab, V. A. Vikulova, A. A. Dimitrievab, V. V. Korobtsovab a Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok
b Far Eastern Federal University, Vladivostok
Abstract:
The results of a comparative study of the lateral photovoltaic effect in Fe$_{3}$O$_{4}$/SiO$_{2}$/$n$-Si and Fe$_{3}$O$_{4}$/SiO$_{2}$/$p$-Si structures are presented. The lateral photovoltage reaches its maximum near the measurement contacts in both structures, but the signs of this voltage differ. As the light spot moves away from the contacts, the photovoltage varies linearly in Fe$_{3}$O$_{4}$/SiO$_{2}$/$n$-Si and decreases exponentially in Fe$_{3}$O$_{4}$/SiO$_{2}$/$p$-Si. It is found that interface states at the SiO$_2$/Si interface induce the photovoltage polarity inversion associated with a change in the conductivity type of silicon. An extreme thickness dependence of the photovoltage with an optimum Fe$_3$O$_4$ film thickness of $\sim$50 nm is observed in both structures.
Received: 09.02.2018 Revised: 16.02.2018
Citation:
T. A. Pisarenko, V. V. Balashev, V. A. Vikulov, A. A. Dimitriev, V. V. Korobtsov, “Comparative study of the lateral photovoltaic effect in Fe$_{3}$O$_{4}$/SiO$_{2}$/$n$-Si and Fe$_{3}$O$_{4}$/SiO$_{2}$/$p$-Si structures”, Fizika Tverdogo Tela, 60:7 (2018), 1311–1317; Phys. Solid State, 60:7 (2018), 1316–1322
Linking options:
https://www.mathnet.ru/eng/ftt9126 https://www.mathnet.ru/eng/ftt/v60/i7/p1311
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