The effect of bismuth on the structural perfection and the luminescent properties of thin-film elastically stressed Al$_{x}$In$_{y}$Ga$_{1-x-y}$Bi$_{z}$Sb$_{1-z}$/GaSb heterostructures

The effect of bismuth on the structural perfection and the luminescent properties of Al$_{x}$In$_{y}$Ga$_{1-x-y}$Bi$_{z}$Sb$_{1-z}$/GaSb heterostructures has been studied. The optimal parameters of the process of zone recrystallization with temperature gradient at which epitaxial AlInGaBiSb layers have the minimum roughness and high structural perfection have been revealed: temperature gradient 1 $\le G \le$ 30 K/cm, the liquid zone thickness 60 $\le l \le$ 100 $\mu$m, the temperature range 773 K $\le T \le$ 873 K, and bismuth concentration 0.3–0.4 mol fraction.