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Fizika Tverdogo Tela, 2018, Volume 60, Issue 8, Page 1583
DOI: https://doi.org/10.21883/FTT.2018.08.46250.14Gr (Mi ftt9111) 		 
This article is cited in 1 scientific paper (total in 1 paper)

International school-seminar ''Excitons in crystals and semiconductor nanostructures'', dedicated to the 120th anniversary of the birth of E. F. Gross, St. Petersburg, October 10-12, 2017
Optical Properties

Basic requirements of spin-flip Raman scattering on excitonic resonances and its modulation through additional high-energy illumination in semiconductor heterostructures

J. Debusa, D. Kudlacika, V. F. Sapegab, T. S. Shamirzaevcd, D. R. Yakovlevab, D. Reutere, A. D. Wieckf, A. Waagg, M. Bayerab

a Experimentelle Physik 2, Technische Universität Dortmund, Dortmund, Germany
b Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
c Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia
d Ural Federal University, Yekaterinburg, Russia
e Department Physik, Universität Paderborn, Paderborn, Germany
f Angewandte Festkörperphysik, Ruhr-Universität Bochum, Bochum, Germany
g Institute of Semiconductor Technology, University of Braunschweig, Braunschweig, Germany
Full-text PDF (31 kB) Citations (1)
DOI: https://doi.org/10.21883/FTT.2018.08.46250.14Gr
Abstract: We describe the major requirements to experimentally perform and observe resonant spin-flip Raman scattering on excitonic resonances in low-dimensional semiconductors. We characterize in detail the properties of this resonant light scattering technique and evaluate the criteria, which must be fulfilled by the experimental setup and the semiconductor sample studied to be able to observe a spin-flip scattering process. We also demonstrate the influence of additional unpolarized laser illumination with energies, which exceed considerably the band gap energy of the semiconductor nanostructure under study, on the resonantly excited electron spin-flip scattering in InAs-based quantum dot ensembles as well as on the paramagnetic Mn-ion spin-flip in (Zn,Mn)Se/(Zn,Be)Se quantum wells.
Funding agency Grant number
Deutsche Forschungsgemeinschaft B2
We acknowledge financial support by the DFG and RFBR in the frame of the ICRC TRR 160 (Project B2).
English version:
Physics of the Solid State, 2018, Volume 60, Issue 8, Pages 1611–1617
DOI: https://doi.org/10.1134/S1063783418080036
Bibliographic databases:
Document Type: Article
Language: English
Citation: J. Debus, D. Kudlacik, V. F. Sapega, T. S. Shamirzaev, D. R. Yakovlev, D. Reuter, A. D. Wieck, A. Waag, M. Bayer, “Basic requirements of spin-flip Raman scattering on excitonic resonances and its modulation through additional high-energy illumination in semiconductor heterostructures”, Fizika Tverdogo Tela, 60:8 (2018), 1583; Phys. Solid State, 60:8 (2018), 1611–1617
Citation in format AMSBIB
\Bibitem{DebKudSap18}
\by J.~Debus, D.~Kudlacik, V.~F.~Sapega, T.~S.~Shamirzaev, D.~R.~Yakovlev, D.~Reuter, A.~D.~Wieck, A.~Waag, M.~Bayer
\paper Basic requirements of spin-flip Raman scattering on excitonic resonances and its modulation through additional high-energy illumination in semiconductor heterostructures
\jour Fizika Tverdogo Tela
\yr 2018
\vol 60
\issue 8
\pages 1583
\mathnet{http://mi.mathnet.ru/ftt9111}
\crossref{https://doi.org/10.21883/FTT.2018.08.46250.14Gr}
\elib{https://elibrary.ru/item.asp?id=35269534}
\transl
\jour Phys. Solid State
\yr 2018
\vol 60
\issue 8
\pages 1611--1617
\crossref{https://doi.org/10.1134/S1063783418080036}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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