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This article is cited in 7 scientific papers (total in 7 papers)
Ferroelectricity
The field effect in a metal–ferroelectric–semiconductor system of multilayer ferroelectric films with various structure types
V. M. Mukhortov, Yu. I. Golovko, A. V. Pavlenko, D. V. Stryukov, S. V. Birukov, A. P. Kovtun, S. P. Zinchenko Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don
Abstract:
The ability to grow the interfacial defect-poor Sr$_{0.5}$Ba$_{0.5}$Nb$_{2}$O$_{6}$+Ba$_{0.2}$Sr$_{0.8}$TiO$_{3}$ and Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$+Ba$_{0.4}$Sr$_{0.6}$TiO$_{3}$ ferroelectric films onto the doped silicon substrates is discussed. A study of piezo-response via the quasi-static method (using the electrode area of 0.07 mm$^2$) reveals that heterostructures possess an initial polarized ferroelectric state with a spontaneous polarization vector perpendicular to the substrate at any type of Si conductivity. The polarized state is established to refer to two-dimension stresses in the ferroelectric, which is tunable through a preprepared Ba$_{x}$Sr$_{1-x}$TiO$_{3}$ onto a sublayer substrate as well as to a thickness of this sublayer. Polarization switching in Sr$_{0.5}$Ba$_{0.5}$Nb$_{2}$O$_{6}$/Si and Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$/Si heterostructures under the external field arises at only using the barium–strontium titanate sublayer predeposited onto silicon. A 15% decrease in switching polarization in Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$/Ba$_{0.4}$Sr$_{0.6}$TiO$_{3}$/Si structures is observed after 500 h.
Received: 22.01.2018 Revised: 14.03.2018
Citation:
V. M. Mukhortov, Yu. I. Golovko, A. V. Pavlenko, D. V. Stryukov, S. V. Birukov, A. P. Kovtun, S. P. Zinchenko, “The field effect in a metal–ferroelectric–semiconductor system of multilayer ferroelectric films with various structure types”, Fizika Tverdogo Tela, 60:9 (2018), 1741–1747; Phys. Solid State, 60:9 (2018), 1786–1792
Linking options:
https://www.mathnet.ru/eng/ftt9078 https://www.mathnet.ru/eng/ftt/v60/i9/p1741
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