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Fizika Tverdogo Tela, 2019, Volume 61, Issue 1, Pages 174–177
DOI: https://doi.org/10.21883/FTT.2019.01.46909.220 (Mi ftt8958) 		 
Low dimensional systems

Entrainment of electrons in a semiconductor nanostructure by a flow of neutral particles

S. V. Gantsevich, V. L. Gurevich

Ioffe Institute, St. Petersburg
Full-text PDF (89 kB)
DOI: https://doi.org/10.21883/FTT.2019.01.46909.220
Abstract: The entrainment of current carriers (electrons) in a two-dimensional semiconductor nanostructure by a flow of neutral particles (atoms or molecules) moving near its surface is considered. It is shown that the physical mechanism is similar to the entrainment of electrons with an ion beam inquantum wires, considered earlier in the works of V.L. Gurevich and M.I. Muradov.
Received: 25.07.2018
English version:
Physics of the Solid State, 2018, Volume 60, Issue 12, Pages 2645–2648
DOI: https://doi.org/10.1134/S1063783419010086
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. V. Gantsevich, V. L. Gurevich, “Entrainment of electrons in a semiconductor nanostructure by a flow of neutral particles”, Fizika Tverdogo Tela, 61:1 (2019), 174–177; Phys. Solid State, 60:12 (2018), 2645–2648
Citation in format AMSBIB
\Bibitem{GanGur19}
\by S.~V.~Gantsevich, V.~L.~Gurevich
\paper Entrainment of electrons in a semiconductor nanostructure by a flow of neutral particles
\jour Fizika Tverdogo Tela
\yr 2019
\vol 61
\issue 1
\pages 174--177
\mathnet{http://mi.mathnet.ru/ftt8958}
\crossref{https://doi.org/10.21883/FTT.2019.01.46909.220}
\elib{https://elibrary.ru/item.asp?id=37477863}
\transl
\jour Phys. Solid State
\yr 2018
\vol 60
\issue 12
\pages 2645--2648
\crossref{https://doi.org/10.1134/S1063783419010086}
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