Localization of carriers in quantum dots with uniaxial anisotropy of shape and composition

The electronic and hole states in quantum dots (QD) of cubic II–VI semiconductors with a spheroidal shape and uniaxial anisotropy have been studied theoretically. The smooth potential energy profiles simulated by the Gauss function in all three spatial directions are considered. The energy level lowering and the energy splitting of the hole state from the valence band top $\Gamma_8$ by momentum 3/2 into the states with projections $\pm$ 3/2, $\pm$ 1/2 on the anisotropy axis are analyzed. The QD anisotropies of three types are considered: the QD size anisotropy, the QD potential barrier anisotropy, and the combined anisotropy. In the first case, flattened quantum dots, in which the characteristic size in the structure plane is larger than the size along the anisotropy axis, are considered. In the second case, QDs, in which the potential barrier height in the plane is lower than that along the anisotropy axis, are considered. In the third case, flattened quantum dots with the anisotropy of the size and the potential barrier are considered. The conditions of the charge carrier localization inside QD have been found, and the influence of the form and composition anisotropies on the energies of exciton transitions in the structures with Cd$_{x}$Zn$_{1-x}$Se quantum dots are discussed.