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This article is cited in 8 scientific papers (total in 8 papers)
XVII International Theophilov Symposium, Yekaterinburg, September 23-28, 2018
Impurity centers
Origin of the concentration quenching of luminescence in Zn$_{2}$SiO$_{4}$ : Mn phosphors
T. A. Onufrievaa, T. I. Krasnenkoa, N. A. Zaitsevaab, I. V. Baklanovaa, M. V. Rotermel'a, I. V. Ivanovaa, I. D. Popova, R. F. Samigullinaa a Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Ekaterinburg
b Ural State Mining University
Abstract:
The analysis of the unified series of single-phase Zn$_{2-2x}$Mn$_{2x}$SiO$_{4}$ samples ($x\le$ 0.2) has provided the possibility to determine the optimal dopant concentration $x$ = 0.13 for the maximum luminescence intensity. It has been established that the dominating mechanism of concentration luminescence quenching and excitation energy dissipation is the oxidation of some Mn$^{2+}$ activating ions and the growth of defectness in the luminophore due to this process Phosphors.
Citation:
T. A. Onufrieva, T. I. Krasnenko, N. A. Zaitseva, I. V. Baklanova, M. V. Rotermel', I. V. Ivanova, I. D. Popov, R. F. Samigullina, “Origin of the concentration quenching of luminescence in Zn$_{2}$SiO$_{4}$ : Mn phosphors”, Fizika Tverdogo Tela, 61:5 (2019), 908–911; Phys. Solid State, 61:5 (2019), 806–810
Linking options:
https://www.mathnet.ru/eng/ftt8823 https://www.mathnet.ru/eng/ftt/v61/i5/p908
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