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This article is cited in 1 scientific paper (total in 1 paper)
Graphenes
Carbon nanostructures on a semiconductor substrate
S. Yu. Davydov Ioffe Institute, St. Petersburg
Abstract:
The analytical expressions for the density of states and the occupation numbers are obtained for simple models of carbon nanostructures (graphene–boron nitride lateral heterostructure, decorated zigzag edges of semi-infinity graphene and graphene nanoribbons, and decorated carbyne). The main attention is placed to the strong-coupling regime of the nanostructures with a semiconducting substrate. The numerical estimations are given for the SiC substrate.
Received: 17.01.2019 Revised: 17.01.2019 Accepted: 31.01.2019
Citation:
S. Yu. Davydov, “Carbon nanostructures on a semiconductor substrate”, Fizika Tverdogo Tela, 61:6 (2019), 1214–1220; Phys. Solid State, 61:6 (2019), 1154–1161
Linking options:
https://www.mathnet.ru/eng/ftt8803 https://www.mathnet.ru/eng/ftt/v61/i6/p1214
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Abstract page: | 39 | Full-text PDF : | 8 |
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