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Ferroelectricity
Response of the dielectric parameters of (110)SrTiO$_{3}$ films to the formation of ferroelectric domains in their volume
Yu. A. Boikov, V. A. Danilov Ioffe Institute, St. Petersburg
Abstract:
Three-layer SrRuO$_{3}$/SrTiO$_{3}$/SrRuO$_{3}$ heterostructures were grown by laser evaporation on (110)LaAlO$_{3}$ substrates. Photolithography and ion etching are used to form plane-parallel film capacitors, in which a layer of strontium titanate is placed between two film electrodes of strontium ruthenate. Data on the structure and orientation of the intermediate SrTiO$_{3}$ layer in the grown heterostructures were obtained. The variation of the dielectric constant and dielectric loss of the SrTiO$_{3}$ intermediate layer upon varying the temperature and intensity of an external electric field was studied.
Keywords:
dielectric constant, dielectric loss.
Received: 08.04.2019 Revised: 08.04.2019 Accepted: 09.04.2019
Citation:
Yu. A. Boikov, V. A. Danilov, “Response of the dielectric parameters of (110)SrTiO$_{3}$ films to the formation of ferroelectric domains in their volume”, Fizika Tverdogo Tela, 61:8 (2019), 1480–1482; Phys. Solid State, 61:8 (2019), 1425–1427
Linking options:
https://www.mathnet.ru/eng/ftt8728 https://www.mathnet.ru/eng/ftt/v61/i8/p1480
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Statistics & downloads: |
Abstract page: | 37 | Full-text PDF : | 9 |
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