Abstract:
In this paper, we show the effect of synthesis temperature on the microstructure and electrophysical properties of ferroelectric Ba0.8Sr0.2TiO3 films during the formation on silicon substrates with a platinum sublayer. Based on our measurements, we conclude that temperature of synthesis of ferroelectric films affects their electrophysical and topographical properties.
This work was performed within the framework of a state assignment and was partially supported by the Russian Foundation for Basic Research, projects nos. 18-29-11029 and 19-07-00271. Scanning probe microscopy studies were partially supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 11.9706.2017/7.8.
Citation:
M. S. Afanasiev, D. A. Kiselev, S. A. Levashov, A. A. Sivov, G. V. Chucheva, “The effect of synthesis temperature on the microstructure and electrophysical properties of BST 80/20 films”, Fizika Tverdogo Tela, 61:10 (2019), 1948–1952; Phys. Solid State, 61:10 (2019), 1910–1914
\Bibitem{AfaKisLev19}
\by M.~S.~Afanasiev, D.~A.~Kiselev, S.~A.~Levashov, A.~A.~Sivov, G.~V.~Chucheva
\paper The effect of synthesis temperature on the microstructure and electrophysical properties of BST 80/20 films
\jour Fizika Tverdogo Tela
\yr 2019
\vol 61
\issue 10
\pages 1948--1952
\mathnet{http://mi.mathnet.ru/ftt8681}
\crossref{https://doi.org/10.21883/FTT.2019.10.48275.463}
\elib{https://elibrary.ru/item.asp?id=41174947}
\transl
\jour Phys. Solid State
\yr 2019
\vol 61
\issue 10
\pages 1910--1914
\crossref{https://doi.org/10.1134/S1063783419100032}
Linking options:
https://www.mathnet.ru/eng/ftt8681
https://www.mathnet.ru/eng/ftt/v61/i10/p1948
This publication is cited in the following 4 articles:
M. S. Afanas'ev, D. A. Belorusov, D. A. Kiselyov, V. A. Luzanov, G. V. Chucheva, “Influence of conditions for the formation of hafnium oxide films on the structural and electrical properties of heterostructures.”, Radiotekhnika i elektronika, 68:10 (2023), 973
M. S. Afanasyev, D. A. Belorusov, D. A. Kiselev, V. A. Luzanov, G. V. Chucheva, “Effect of Formation Conditions for Hafnium Oxide Films on Structural and Electrophysical Properties of Heterostructures”, J. Commun. Technol. Electron., 68:10 (2023), 1191
M. S. Afanasiev, D. A. Kiselev, S. A. Levashov, A. A. Sivov, G. V. Chucheva, “Creation and investigation of metal–dielectric–semiconductor structures based on ferroelectric films”, Phys. Solid State, 62:3 (2020), 480–484
Evgeny I. Goldman, Galina V. Chucheva, Mikhail S. Afanasiev, Dmitry A. Kiselev, “Changes in the structural and electrophysical properties of Ba0.8Sr0.2TiO3 films with decreasing thickness”, Chaos, Solitons & Fractals, 141 (2020), 110315