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This article is cited in 4 scientific papers (total in 4 papers)
Surface physics, thin films
The effect of synthesis temperature on the microstructure and electrophysical properties of BST 80/20 films
M. S. Afanasieva, D. A. Kiselevab, S. A. Levashova, A. A. Sivova, G. V. Chuchevaa a Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
b National University of Science and Technology «MISIS», Moscow
Abstract:
In this paper, we show the effect of synthesis temperature on the microstructure and electrophysical properties of ferroelectric Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ films during the formation on silicon substrates with a platinum sublayer. Based on our measurements, we conclude that temperature of synthesis of ferroelectric films affects their electrophysical and topographical properties.
Keywords:
metal-dielectric-metal structures, ferroelectric Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ films, microstructure, electrophysical properties, scanning probe microscopy.
Received: 22.04.2019 Revised: 22.04.2019 Accepted: 23.04.2019
Citation:
M. S. Afanasiev, D. A. Kiselev, S. A. Levashov, A. A. Sivov, G. V. Chucheva, “The effect of synthesis temperature on the microstructure and electrophysical properties of BST 80/20 films”, Fizika Tverdogo Tela, 61:10 (2019), 1948–1952; Phys. Solid State, 61:10 (2019), 1910–1914
Linking options:
https://www.mathnet.ru/eng/ftt8681 https://www.mathnet.ru/eng/ftt/v61/i10/p1948
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