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International Conference ''Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films'' dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) St. Petersburg, July 1-5, 2019
Phase transitions
Phenomenological models of nucleation and growth of metal on a semiconductor
N. I. Plusnin Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok
Abstract:
Four modes of metal growth on a semiconductor substrate have been detected and distinguished on the basis of experimental data obtained under similar conditions using hot wall epitaxy. These modes are achieved at certain ratios between translational kinetic energy of vapor deposited onto substrate and its temperature. The mechanism of adaptation to the substrate of nanophase wetting coating of metal is proposed when the mode of pure metal growth is implemented, as is the structural model of this coating.
Keywords:
wetting, growth, vapor– substrate interaction, metal – semiconductor system, electronic and optical spectroscopy.
Received: 16.07.2019 Revised: 16.07.2019 Accepted: 25.07.2019
Citation:
N. I. Plusnin, “Phenomenological models of nucleation and growth of metal on a semiconductor”, Fizika Tverdogo Tela, 61:12 (2019), 2421–2424; Phys. Solid State, 61:12 (2019), 2431–2433
Linking options:
https://www.mathnet.ru/eng/ftt8582 https://www.mathnet.ru/eng/ftt/v61/i12/p2421
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Abstract page: | 44 | Full-text PDF : | 13 |
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