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Fizika Tverdogo Tela, 2020, Volume 62, Issue 1, Page 93 (Mi ftt8527)  

This article is cited in 5 scientific papers (total in 5 papers)

Semiconductors

Sprayed NiO-doped $p$-type transparent ZnO thin films suitable for gas-sensing devices

Y. Aounab, R. Meneceura, S. Benramacheb, B. Maaouic

a Mechanical Department, Faculty of Technology, University of El-Oued, Algeria
b Laboratoire de Physique Photonique et Nanomatériaux Multifonctionnels, University of Biskra, Algeria
c VTRS Laboratory, Institute of Technology, University of El-Oued, Algeria
Full-text PDF (31 kB) Citations (5)
Abstract: The spray pneumatic method has been successfully employed for the preparation of polycrystalline NiO-doped ZnO thin films. The effect of NiO content (0, 1, 2, 3, and 6 at.%) is studied on structural, optical, and electrical properties of NiO-doped ZnO thin films. The thin films were successfully deposited on a glass substrate at 450$^\circ$C using the organic solar heater. XRD patterns of NiO-doped ZnO thin films indicate that the obtained ZnO thin films are polycrystalline with (100), (002), and (101) highest peaks of ZnO phase. However, $\alpha$-Ni(OH)$_{2}$ and $\beta$-Ni(OH)$_{2}$ were observed at 6 and 3 at.% NiO, respectively. The crystal structure was improved for doped thin films, the crystallite size decreased by increasing the NiO content up to 6 at.% NiO. All thin films have a high optical transmission in the visible region of about 85%. The optical band gap energy decreased from 3.26 eV for 0% to 3.34 eV for 1 at.%, and further decreased to 3.27 eV for 6 at.% NiO. The thin film deposited with 3 at.% NiO has the lowest value of Urbach energy (0.091 eV). The electrical conductivity of the NiO-doped ZnO films increased greatly from 0.016 ($\Omega$ $\cdot$ cm)$^{-1}$ for 0% NiO to 0.042 ($\Omega$ $\cdot$ cm)$^{-1}$ for 3 at.% NiO. It can be noted that the deposited film after 3 at.% NiO is a $p$-type semiconductor.
Keywords: ZnO, thin films, NiO-doping, transparent conductive oxides (TCO), spray pneumatic method.
Received: 27.08.2019
English version:
Physics of the Solid State, 2020, Volume 62, Issue 1, Pages 131–136
DOI: https://doi.org/10.1134/S1063783420010060
Bibliographic databases:
Document Type: Article
Language: English
Citation: Y. Aoun, R. Meneceur, S. Benramache, B. Maaoui, “Sprayed NiO-doped $p$-type transparent ZnO thin films suitable for gas-sensing devices”, Fizika Tverdogo Tela, 62:1 (2020), 93; Phys. Solid State, 62:1 (2020), 131–136
Citation in format AMSBIB
\Bibitem{AouMenBen20}
\by Y.~Aoun, R.~Meneceur, S.~Benramache, B.~Maaoui
\paper Sprayed NiO-doped $p$-type transparent ZnO thin films suitable for gas-sensing devices
\jour Fizika Tverdogo Tela
\yr 2020
\vol 62
\issue 1
\pages 93
\mathnet{http://mi.mathnet.ru/ftt8527}
\elib{https://elibrary.ru/item.asp?id=42571190}
\transl
\jour Phys. Solid State
\yr 2020
\vol 62
\issue 1
\pages 131--136
\crossref{https://doi.org/10.1134/S1063783420010060}
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  • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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