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This article is cited in 2 scientific papers (total in 2 papers)
Semiconductors
Anisotropic carrier transport in $n$-doped 6$H$-SiC
R. T. Ferraciolia, C. G. Rodriguesa, R. Luzzib a School of Exact Sciences and Computing, Pontifical Catholic University,
Goiás, Brazil
b Condensed Matter Physics Department, Institute of Physics "Gleb Wataghin", Campinas, Brazil
Abstract:
In this paper, a study is presented on the charge transport in n-type doped semiconductor 6$H$-SiC (in both transient and steady state) using a Non-Equilibrium Quantum Kinetic Theory derived from the method of Nonequilibrium Statistical Operator (NSO), which furnishes a clear description of the irreversible phenomena that occur in the evolution of the analyzed system. We obtain theoretically the dependence on the electric field (applied in the orientation perpendicular or parallel to the $c$-axis) of the basic macrovariables: the “electron drift velocity” and the “non-equilibrium temperature”. The “peak points” in time evolution of this macrovariables are derived and analyzed.
Keywords:
semiconductors, 6$H$-SiC, charge transport, drift velocity.
Received: 11.07.2019 Revised: 11.07.2019 Accepted: 09.08.2019
Citation:
R. T. Ferracioli, C. G. Rodrigues, R. Luzzi, “Anisotropic carrier transport in $n$-doped 6$H$-SiC”, Fizika Tverdogo Tela, 62:1 (2020), 90; Phys. Solid State, 62:1 (2020), 110–115
Linking options:
https://www.mathnet.ru/eng/ftt8524 https://www.mathnet.ru/eng/ftt/v62/i1/p90
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