Fizika Tverdogo Tela
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika Tverdogo Tela:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika Tverdogo Tela, 2020, Volume 62, Issue 1, Page 90 (Mi ftt8524)  

This article is cited in 2 scientific papers (total in 2 papers)

Semiconductors

Anisotropic carrier transport in $n$-doped 6$H$-SiC

R. T. Ferraciolia, C. G. Rodriguesa, R. Luzzib

a School of Exact Sciences and Computing, Pontifical Catholic University, Goiás, Brazil
b Condensed Matter Physics Department, Institute of Physics "Gleb Wataghin", Campinas, Brazil
Full-text PDF (26 kB) Citations (2)
Abstract: In this paper, a study is presented on the charge transport in n-type doped semiconductor 6$H$-SiC (in both transient and steady state) using a Non-Equilibrium Quantum Kinetic Theory derived from the method of Nonequilibrium Statistical Operator (NSO), which furnishes a clear description of the irreversible phenomena that occur in the evolution of the analyzed system. We obtain theoretically the dependence on the electric field (applied in the orientation perpendicular or parallel to the $c$-axis) of the basic macrovariables: the “electron drift velocity” and the “non-equilibrium temperature”. The “peak points” in time evolution of this macrovariables are derived and analyzed.
Keywords: semiconductors, 6$H$-SiC, charge transport, drift velocity.
Received: 11.07.2019
Revised: 11.07.2019
Accepted: 09.08.2019
English version:
Physics of the Solid State, 2020, Volume 62, Issue 1, Pages 110–115
DOI: https://doi.org/10.1134/S1063783420010102
Bibliographic databases:
Document Type: Article
Language: English
Citation: R. T. Ferracioli, C. G. Rodrigues, R. Luzzi, “Anisotropic carrier transport in $n$-doped 6$H$-SiC”, Fizika Tverdogo Tela, 62:1 (2020), 90; Phys. Solid State, 62:1 (2020), 110–115
Citation in format AMSBIB
\Bibitem{FerRodLuz20}
\by R.~T.~Ferracioli, C.~G.~Rodrigues, R.~Luzzi
\paper Anisotropic carrier transport in $n$-doped 6$H$-SiC
\jour Fizika Tverdogo Tela
\yr 2020
\vol 62
\issue 1
\pages 90
\mathnet{http://mi.mathnet.ru/ftt8524}
\elib{https://elibrary.ru/item.asp?id=42571187}
\transl
\jour Phys. Solid State
\yr 2020
\vol 62
\issue 1
\pages 110--115
\crossref{https://doi.org/10.1134/S1063783420010102}
Linking options:
  • https://www.mathnet.ru/eng/ftt8524
  • https://www.mathnet.ru/eng/ftt/v62/i1/p90
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika Tverdogo Tela Fizika Tverdogo Tela
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024