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This article is cited in 1 scientific paper (total in 1 paper)
International Conference "Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films", dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) Saint Petersburg, July 1-5, 2019
Surface physics, thin films
Synthesis of TiN, Ti and TiSi$_{2}$ thin films for the contact system of solar cells
K. Kh. Nussupov, N. B. Beisenkhanov, D. I. Bakranova, S. Keinbay, A. A. Turakhun, A. A. Sultan Kazakh-British Technical University
Abstract:
The influence of deposition parameters, such as: the magnetron power in the range 690–1400 W, the silicon substrate temperature 23–170$^{\circ}$C, the N$_2$ gas flow rate 0.9–3.6 L/h, the Ar gas flow rate 0.06–3.6 L/h, the ratio of N$_2$/Ar gas flows 1–60 on the thickness, the density, and the composition of the deposited films is analyzed. The maximum density 5.247 g/cm$^3$ corresponding to the TiN$_{0.786}$ = Ti$_{56}$N$_{44}$ composition has been achieved at the following deposition parameters: 1200 W, N/Ar = 1.8/0.06 L/h = 30, 0.8 Pa, 320 s, and 100$^{\circ}$C. At temperatures 700–800$^{\circ}$C, the mutual diffusion of titanium and silicon atoms through the interface leads to the active nucleation, the formation of nanocrystals and low-resistance metallization layers. X-ray diffraction shows that, during annealing at 700$^{\circ}$C (30 min, Ar), the formation of phase TiSi$_2$ due to the diffusion of Ti atoms into silicon is twice more intense than the formation of Ti$_5$Si$_3$ due to the diffusion of silicon atoms into titanium as a result of high hardness of titanium. The average sizes of TiSi$_2$ decreases from 7.1 to 5.6 nm at 750$^{\circ}$C due to the crystallization of the nuclei and increase to 9.2 nm at 800$^{\circ}$C.
Keywords:
silicon, titanium, titanium nitride, diffusion barrier, solar cell.
Received: 16.07.2019 Revised: 16.07.2019 Accepted: 25.07.2019
Citation:
K. Kh. Nussupov, N. B. Beisenkhanov, D. I. Bakranova, S. Keinbay, A. A. Turakhun, A. A. Sultan, “Synthesis of TiN, Ti and TiSi$_{2}$ thin films for the contact system of solar cells”, Fizika Tverdogo Tela, 62:1 (2020), 46–51; Phys. Solid State, 62:1 (2020), 48–53
Linking options:
https://www.mathnet.ru/eng/ftt8515 https://www.mathnet.ru/eng/ftt/v62/i1/p46
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