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This article is cited in 2 scientific papers (total in 2 papers)
International Conference "Mechanisms and Nonlinear Problems of Nucleation, Growth of Crystals and Thin Films", dedicated to the memory of the outstanding theoretical physicist Professor V.V. Slezov (Proceedings) Saint Petersburg, July 1-5, 2019
Semiconductors
Mathematical simulation of the process of growing a cdte single crystal by the Obreimov–Shubnikov method
M. D. Pavlyuka, E. A. Sukhanovab, M. P. Zykovab, I. S. Volchkova, V. M. Kanevskiia, I. A. Subbotinc, K. M. Poduretsc, B. Ph. Pavlyukd, Y. M. Ivanove a Institute of Cristallography Russian Academy of Sciences, Moscow
b D. Mendeleev University of Chemical Technology of Russia
c National Research Centre "Kurchatov Institute", Moscow
d All-Russian Scientific Research Institute of Aviation Materials, Moscow
e Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences
Abstract:
For the first time, the process of growing a CdTe crystal by the modified Obreimov–Shubnikov method using the technique of self-nucleation from the initial cooling temperature (1100$^\circ$C) to the time of reaching the stationary growth mode is simulated. The motion of the crystallization front during crystal growth is calculated. The results are confirmed by the X-ray topography method with use of synchrotron
radiation.
Keywords:
CdTe, crystallization front, thermoconvective flows.
Received: 16.07.2019 Revised: 16.07.2019 Accepted: 25.07.2019
Citation:
M. D. Pavlyuk, E. A. Sukhanova, M. P. Zykova, I. S. Volchkov, V. M. Kanevskii, I. A. Subbotin, K. M. Podurets, B. Ph. Pavlyuk, Y. M. Ivanov, “Mathematical simulation of the process of growing a cdte single crystal by the Obreimov–Shubnikov method”, Fizika Tverdogo Tela, 62:1 (2020), 5–10; Phys. Solid State, 62:1 (2020), 1–7
Linking options:
https://www.mathnet.ru/eng/ftt8506 https://www.mathnet.ru/eng/ftt/v62/i1/p5
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