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This article is cited in 1 scientific paper (total in 1 paper)
Magnetism
The influence of the skin effect and active loss on the intensity of EPR lines in semiconductor materials
A. M. Zyuzin, A. A. Karpeev, N. V. Yantsen Ogarev Mordovia State University, Saransk
Abstract:
The influence of the skin effect and active loss in a semiconductor composite with a wide range of the values of the conductivity on the intensity of EPR absorption lines has been studied. An approach that enables one to obtain adequate agreement of the calculated and experimental results has been proposed. The absorption line intensity corresponding to the unit volume is shown can decrease by several times as the sample volume increases in the dependence on the conductivity of a material under study.
Keywords:
electron paramagnetic resonance, skin effect, semiconducting substances.
Received: 24.09.2019 Revised: 04.10.2019 Accepted: 08.10.2019
Citation:
A. M. Zyuzin, A. A. Karpeev, N. V. Yantsen, “The influence of the skin effect and active loss on the intensity of EPR lines in semiconductor materials”, Fizika Tverdogo Tela, 62:2 (2020), 241–246; Phys. Solid State, 62:2 (2020), 291–296
Linking options:
https://www.mathnet.ru/eng/ftt8493 https://www.mathnet.ru/eng/ftt/v62/i2/p241
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Abstract page: | 48 | Full-text PDF : | 30 |
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