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This article is cited in 3 scientific papers (total in 3 papers)
Semiconductors
Dependence of the longitudinal-transverse exciton splitting in a quantum well on an external homogeneous electric field
D. K. Loginov, A. V. Donets Saint Petersburg State University
Abstract:
A decrease in the longitudinal-transverse exciton splitting in a wide GaAs/AlGaAs quantum well (QW) in a homogeneous electric field has been theoretically considered. The dependences of the splitting on the applied field have been determined. The exciton reflection spectra of the wide QW have been calculated for the case where the field is oriented across the QW layer. The amplitude of exciton-related spectral oscillations is shown to decrease due to a decrease of the photo-excitonic interaction.
Keywords:
exciton, electric field, reflectance spectra, quantum well.
Received: 25.09.2019 Revised: 25.09.2019 Accepted: 02.10.2019
Citation:
D. K. Loginov, A. V. Donets, “Dependence of the longitudinal-transverse exciton splitting in a quantum well on an external homogeneous electric field”, Fizika Tverdogo Tela, 62:2 (2020), 208–213; Phys. Solid State, 62:2 (2020), 246–251
Linking options:
https://www.mathnet.ru/eng/ftt8486 https://www.mathnet.ru/eng/ftt/v62/i2/p208
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Abstract page: | 39 | Full-text PDF : | 11 |
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