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Ferroelectricity
Creation and investigation of metal–dielectric–semiconductor structures based on ferroelectric films
M. S. Afanasieva, D. A. Kiselevab, S. A. Levashova, A. A. Sivova, G. V. Chuchevaa a Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
b National University of Science and Technology «MISIS», Moscow
Abstract:
The effect of the synthesis temperature on the microstructure and the electrophysical properties of metal–dielectric–semiconductor structures based on ferroelectric films of the composition Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ upon the formation of $p$-type silicon substrates with [100] orientation is studied. It was experimentally established that an increase in the synthesis temperature leads to an improvement in the dielectric and piezoelectric properties of ferroelectric films. The temperature stability and stability in the behavior of the capacitance–voltage characteristics of MIS structures on the number of switching cycles are shown.
Keywords:
metal, dielectric–semiconductor structures, ferroelectric films of the composition Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$, microstructure, scanning probe microscopy, capacitance–voltage characteristics, capacitance, switching cycles.
Received: 18.10.2019 Revised: 18.10.2019 Accepted: 23.10.2019
Citation:
M. S. Afanasiev, D. A. Kiselev, S. A. Levashov, A. A. Sivov, G. V. Chucheva, “Creation and investigation of metal–dielectric–semiconductor structures based on ferroelectric films”, Fizika Tverdogo Tela, 62:3 (2020), 422–426; Phys. Solid State, 62:3 (2020), 480–484
Linking options:
https://www.mathnet.ru/eng/ftt8473 https://www.mathnet.ru/eng/ftt/v62/i3/p422
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Abstract page: | 35 | Full-text PDF : | 7 |
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