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This article is cited in 2 scientific papers (total in 2 papers)
Low dimensional systems
AlN and GaN nanostructures: analytical estimations of the characteristics of the electronic spectrum
S. Yu. Davydov Ioffe Institute, St. Petersburg
Abstract:
Analytical expressions for the band gaps and characteristic velocities and effective masses of carriers are obtained for infinite flat sheets, free and decorated nanoribbons with zigzag edges, and chains of aluminum and gallium nitrides. The values obtained are compared with the characteristics for silicon carbide and carbon nanostructures calculated within the same models. The role of the substrate is also briefly discussed.
Keywords:
two-dimensional sheet, nanoribbon, linear chain, band-gap width, electron characteristic velocity, effective mass.
Received: 20.01.2020 Revised: 20.01.2020 Accepted: 21.01.2020
Citation:
S. Yu. Davydov, “AlN and GaN nanostructures: analytical estimations of the characteristics of the electronic spectrum”, Fizika Tverdogo Tela, 62:6 (2020), 955–959; Phys. Solid State, 62:6 (2020), 1085–1089
Linking options:
https://www.mathnet.ru/eng/ftt8411 https://www.mathnet.ru/eng/ftt/v62/i6/p955
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