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This article is cited in 4 scientific papers (total in 4 papers)
International conference ''Phase transitions, critical and nonlinear phenomena in condensed matter'', Makhachkala, September 15-20, 2019
Semiconductors
Electric and galvanomagnetic properties of Cd$_{3}$As$_{2}$–20 mol % MnAs composite under high pressure
L. A. Saypulaevaa, M. M. Gadzhialieva, A. G. Alibekova, N. V. Melnikovab, V. S. Zakhvalinskiic, A. I. Rild, S. F. Marenkind, A. N. Babushkinb a Daghestan Institute of Physics after Amirkhanov, Makhachkala, Russia
b Institute of Natural Sciences and Mathematics, Ural Federal University
c National Research University "Belgorod State University"
d Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow
Abstract:
The pressure dependences of electrical resistance, Hall coefficient, charge carrier mobilities, and magnetoresistance of the Cd$_{3}$As$_{2}$–20 mol % MnAs composite are investigated at pressures up to 9 GPa. The pressure dependences of all the listed properties exhibit features related to phase transitions. The presence of pressure-induced negative magnetoresistance is registered.
Keywords:
high pressure, Hall effect, electrical resistivity, negative magnetoresistance, structural phase transition.
Received: 30.12.2019 Revised: 30.12.2019 Accepted: 10.01.2020
Citation:
L. A. Saypulaeva, M. M. Gadzhialiev, A. G. Alibekov, N. V. Melnikova, V. S. Zakhvalinskii, A. I. Ril, S. F. Marenkin, A. N. Babushkin, “Electric and galvanomagnetic properties of Cd$_{3}$As$_{2}$–20 mol % MnAs composite under high pressure”, Fizika Tverdogo Tela, 62:6 (2020), 834–838; Phys. Solid State, 62:6 (2020), 942–946
Linking options:
https://www.mathnet.ru/eng/ftt8390 https://www.mathnet.ru/eng/ftt/v62/i6/p834
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