This article is cited in 4 scientific papers (total in 4 papers)
International conference ''Phase transitions, critical and nonlinear phenomena in condensed matter'', Makhachkala, September 15-20, 2019 Semiconductors
Electric and galvanomagnetic properties of Cd$_{3}$As$_{2}$–20 mol % MnAs composite under high pressure
Abstract:
The pressure dependences of electrical resistance, Hall coefficient, charge carrier mobilities, and magnetoresistance of the Cd$_{3}$As$_{2}$–20 mol % MnAs composite are investigated at pressures up to 9 GPa. The pressure dependences of all the listed properties exhibit features related to phase transitions. The presence of pressure-induced negative magnetoresistance is registered.
Keywords:
high pressure, Hall effect, electrical resistivity, negative magnetoresistance, structural phase transition.
Citation:
L. A. Saypulaeva, M. M. Gadzhialiev, A. G. Alibekov, N. V. Melnikova, V. S. Zakhvalinskii, A. I. Ril, S. F. Marenkin, A. N. Babushkin, “Electric and galvanomagnetic properties of Cd$_{3}$As$_{2}$–20 mol % MnAs composite under high pressure”, Fizika Tverdogo Tela, 62:6 (2020), 834–838; Phys. Solid State, 62:6 (2020), 942–946