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Fizika Tverdogo Tela, 2020, Volume 62, Issue 9, Pages 1420–1427
DOI: https://doi.org/10.21883/FTT.2020.09.49764.23H
(Mi ftt8312)
 

This article is cited in 1 scientific paper (total in 1 paper)

XXIV International Symposium Nanophysics and Nanoelectronics, Nizhny Novgorod, March 10-13, 2020
Superconductivity

Control of superconducting transitions in nanowires using galvanically uncoupled gates for designing superconductor-based electronic devices

B. A. Gurovicha, K. E. Prikhod'koab, L. V. Kutuzova, B. V. Goncharova

a National Research Centre "Kurchatov Institute", Moscow
b National Engineering Physics Institute "MEPhI", Moscow
Full-text PDF (777 kB) Citations (1)
Abstract: A possibility of contactless switching of an NbN nanowire from superconducting to normal state by passing a current through a gate located at a certain distance from the nanowire is demonstrated. The gate, being isolated from the nanowire by an Al$_2$O$_3$ layer, contains an integrated resistance formed by ion irradiation. Dependences of the minimum power released in the gate that is sufficient for nanowire to pass to the normal state on the dc current through the nanowire are experimentally obtained. A signal inverter containing three successive cascades is developed based on this principle. This design shows that the proposed approach can be used to form a logic element base for cryogenic computing.
Keywords: thin superconducting NbN films, contactless switching of superconductor state, cryoelectronic device, integrated cryogenic resistors.
Funding agency Grant number
National Research Centre "Kurchatov Institute" 1359
This study was supported by the National Research Centre Kurchatov Institute (order no. 1359 on June 25, 2019).
Received: 26.03.2020
Revised: 26.03.2020
Accepted: 02.04.2020
English version:
Physics of the Solid State, 2020, Volume 62, Issue 9, Pages 1585–1591
DOI: https://doi.org/10.1134/S1063783420090103
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. A. Gurovich, K. E. Prikhod'ko, L. V. Kutuzov, B. V. Goncharov, “Control of superconducting transitions in nanowires using galvanically uncoupled gates for designing superconductor-based electronic devices”, Fizika Tverdogo Tela, 62:9 (2020), 1420–1427; Phys. Solid State, 62:9 (2020), 1585–1591
Citation in format AMSBIB
\Bibitem{GurPriKut20}
\by B.~A.~Gurovich, K.~E.~Prikhod'ko, L.~V.~Kutuzov, B.~V.~Goncharov
\paper Control of superconducting transitions in nanowires using galvanically uncoupled gates for designing superconductor-based electronic devices
\jour Fizika Tverdogo Tela
\yr 2020
\vol 62
\issue 9
\pages 1420--1427
\mathnet{http://mi.mathnet.ru/ftt8312}
\crossref{https://doi.org/10.21883/FTT.2020.09.49764.23H}
\elib{https://elibrary.ru/item.asp?id=44154224}
\transl
\jour Phys. Solid State
\yr 2020
\vol 62
\issue 9
\pages 1585--1591
\crossref{https://doi.org/10.1134/S1063783420090103}
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  • https://www.mathnet.ru/eng/ftt/v62/i9/p1420
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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