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Ferroelectricity
Quasi-stationary processes of the dielectric relaxation in polycrystalline thin PZT films
V. V. Ivanova, E. N. Golubevaa, O. N. Sergeevaab, G. M. Nekrasovab, I. P. Proninc, D. A. Kiselevd a Tver State University
b Tver State Agricultural Academy
c Ioffe Institute, St. Petersburg
d National University of Science and Technology «MISIS», Moscow
Abstract:
The relaxation processes in polycrystalline PZT films formed on silicon substrates have been studied during a quasi-static change in an external electric field. The dielectric relaxation is shown to be characterized at least by three relaxation times depending on the direction of the self-polarization in the film, the value of the polarizing field, and also the PZT film annealing temperature.
Keywords:
thin polycrystalline PZT films, RF magnetron sputtering, dielectric relaxation.
Received: 17.04.2020 Revised: 17.04.2020 Accepted: 21.04.2020
Citation:
V. V. Ivanov, E. N. Golubeva, O. N. Sergeeva, G. M. Nekrasova, I. P. Pronin, D. A. Kiselev, “Quasi-stationary processes of the dielectric relaxation in polycrystalline thin PZT films”, Fizika Tverdogo Tela, 62:10 (2020), 1665–1669; Phys. Solid State, 62:10 (2020), 1868–1872
Linking options:
https://www.mathnet.ru/eng/ftt8287 https://www.mathnet.ru/eng/ftt/v62/i10/p1665
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Statistics & downloads: |
Abstract page: | 55 | Full-text PDF : | 15 |
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