Electron and hole scattering by deep impurities in semiconductor heterostructures with quantum wells

Scattering of electrons and holes by a system of deep impurities in gallium arsenide-based semiconductor heterostructures with two quantum wells in the approximation of a maximally localized potential at an arbitrary doping profile has been studied. It is shown that the dependences of the probabilities of electron and hole scattering per unit time on the carrier energy repeat a threshold form of the density states of size quantization subbands of a heterostructure with allowance for the contribution of the integral of overlap of the carrier wave functions. For the hole subbands with the negative effective mass, the probabilities of scattering at the subband edges per unit time have singularities typical of one-dimensional systems.