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Fizika Tverdogo Tela, 2020, Volume 62, Issue 12, Pages 2087–2092
DOI: https://doi.org/10.21883/FTT.2020.12.50212.165
(Mi ftt8224)
 

This article is cited in 1 scientific paper (total in 1 paper)

Mechanical properties, strength physics and plasticity

Bias for the basal edge dislocation loop in zirconium: numerical analysis

A. V. Babich, V. F. Klepikov, P. N. Ostapchuk

Institute of Electrophysics & Radiation Technologies National Academy of Sciences of Ukraine
Full-text PDF (133 kB) Citations (1)
Abstract: Recent numerical calculation of the coefficients of diffusion of radiation point defects in hexagonal crystals have shown that the main assumption of the theory of radiation growth of zirconium—namely, the assumption about diffusional anisotropy difference (DAD)—is not fulfilled. Thus, the elastic ideology based on the concept of bias of sinks, i.e., elastic interaction difference (EID), remains relevant. In this connection, bias for the basal edge loop of zirconium in a toroidal reservoir is numerically calculated by the finite difference method under consideration of the elastic anisotropy of a hexagonal crystal. The toroidal geometry of the reservoir allows one to perform calculations for a loop with any size and without any correction for the elastic field in the region, in which it has an effect. The dependences of the bias of the loop on its radius and nature are obtained for various drain densities. The essential role of the shape of the boundary condition on the external surface of the reservoir is shown. Prospects for further research in constructing the theory of radiation growth of zirconium on the basis of elastic ideology are outlined.
Keywords: point defect, basal dislocation loop, bias, zirconium, radiation growth.
Funding agency Grant number
Development of Priority Fields of Scientific Research of the state budget of Ukraine 6541230
This study was performed within program Support for the Development of Priority Fields of Scientific Research of the state budget of Ukraine (KPVK 6541230).
Received: 08.08.2020
Revised: 08.08.2020
Accepted: 18.08.2020
English version:
Physics of the Solid State, 2020, Volume 62, Issue 12, Pages 2350–2356
DOI: https://doi.org/10.1134/S1063783420120045
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Babich, V. F. Klepikov, P. N. Ostapchuk, “Bias for the basal edge dislocation loop in zirconium: numerical analysis”, Fizika Tverdogo Tela, 62:12 (2020), 2087–2092; Phys. Solid State, 62:12 (2020), 2350–2356
Citation in format AMSBIB
\Bibitem{BabKleOst20}
\by A.~V.~Babich, V.~F.~Klepikov, P.~N.~Ostapchuk
\paper Bias for the basal edge dislocation loop in zirconium: numerical analysis
\jour Fizika Tverdogo Tela
\yr 2020
\vol 62
\issue 12
\pages 2087--2092
\mathnet{http://mi.mathnet.ru/ftt8224}
\crossref{https://doi.org/10.21883/FTT.2020.12.50212.165}
\elib{https://elibrary.ru/item.asp?id=44821347}
\transl
\jour Phys. Solid State
\yr 2020
\vol 62
\issue 12
\pages 2350--2356
\crossref{https://doi.org/10.1134/S1063783420120045}
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  • https://www.mathnet.ru/eng/ftt/v62/i12/p2087
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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