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This article is cited in 1 scientific paper (total in 1 paper)
Mechanical properties, strength physics and plasticity
Bias for the basal edge dislocation loop in zirconium: numerical analysis
A. V. Babich, V. F. Klepikov, P. N. Ostapchuk Institute of Electrophysics & Radiation Technologies National Academy of Sciences of Ukraine
Abstract:
Recent numerical calculation of the coefficients of diffusion of radiation point defects in hexagonal crystals have shown that the main assumption of the theory of radiation growth of zirconium—namely, the assumption about diffusional anisotropy difference (DAD)—is not fulfilled. Thus, the elastic ideology based on the concept of bias of sinks, i.e., elastic interaction difference (EID), remains relevant. In this connection, bias for the basal edge loop of zirconium in a toroidal reservoir is numerically calculated by the finite difference method under consideration of the elastic anisotropy of a hexagonal crystal. The toroidal geometry of the reservoir allows one to perform calculations for a loop with any size and without any correction for the elastic field in the region, in which it has an effect. The dependences of the bias of the loop on its radius and nature are obtained for various drain densities. The essential role of the shape of the boundary condition on the external surface of the reservoir is shown. Prospects for further research in constructing the theory of radiation growth of zirconium on the basis of elastic ideology are outlined.
Keywords:
point defect, basal dislocation loop, bias, zirconium, radiation growth.
Received: 08.08.2020 Revised: 08.08.2020 Accepted: 18.08.2020
Citation:
A. V. Babich, V. F. Klepikov, P. N. Ostapchuk, “Bias for the basal edge dislocation loop in zirconium: numerical analysis”, Fizika Tverdogo Tela, 62:12 (2020), 2087–2092; Phys. Solid State, 62:12 (2020), 2350–2356
Linking options:
https://www.mathnet.ru/eng/ftt8224 https://www.mathnet.ru/eng/ftt/v62/i12/p2087
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