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This article is cited in 2 scientific papers (total in 2 papers)
Low dimensional systems
Coulomb plasmon-excitons in planar nanostructures metal-semiconductor
V. A. Kosobukin Ioffe Institute, St. Petersburg, Russia
Abstract:
A theory of Coulomb (non-radiative) plasmons-excitons in a semiconductor with adjacent quantum well and ultrathin metal film is presented. The equations of motion are formulated for the polarization waves of surface plasmons and quasi-two-dimensional excitons with taking account of Coulomb interaction between them. Within a model of coupled harmonic oscillators, solved are the problems of Coulomb plasmon, exciton and plasmon-exciton excitations in the presence of an external dipole force. The coupling contant is calculated for plasmon-excitons, their optical spectra are investigated, and the relative contributions of plasmons and excitons to the normal modes are found. It is concluded that near the resonance between plasmon and exciton the spectrum of plasmon-exciton excitations consists of two peaks whose behavior in passing through the resonance shows the signs of anti-crossing effect (repulsion of frequencies).
Keywords:
plasmons, excitons, Coulomb coupling, plasmon-excitons, polarization waves, anti-crossing.
Received: 26.11.2020 Revised: 26.11.2020 Accepted: 27.11.2020
Citation:
V. A. Kosobukin, “Coulomb plasmon-excitons in planar nanostructures metal-semiconductor”, Fizika Tverdogo Tela, 63:4 (2021), 527–537; Phys. Solid State, 63:4 (2021), 566–576
Linking options:
https://www.mathnet.ru/eng/ftt8153 https://www.mathnet.ru/eng/ftt/v63/i4/p527
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Abstract page: | 47 | Full-text PDF : | 27 |
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