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This article is cited in 1 scientific paper (total in 1 paper)
Metals
Electronic structure of graphene on silicon carbide intercalated with silicon and cobalt atoms
S. M. Dunaevskiiab, E. Yu. Lobanovac, E. K. Mikhailenkoab, I. I. Pronind a The Petersburg Nuclear Physics Institute, The National Research Center "Kurchatov Institute", Gatchina, Russia
b Saint Petersburg Electrotechnical University "LETI", St. Petersburg, Russia
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics, St. Petersburg, Russia
d Ioffe Institute, St. Petersburg, Russia
Abstract:
The ab initio calculations have been performed for the spin-polarized band structure of graphene on silicon carbide intercalated with cobalt and silicon atoms. The cobalt and silicon atoms are shown to be localized during intercalation between the substrate and buffer layer of carbon atoms. The subsequent silicon intercalation and the formation of cobalt silicide lead to the transition from a strong hybridization to the formation of a quasi-free two-layer graphene on the system surface due to the transformation of the buffer layer to the second graphene layer.
Keywords:
graphene on silicon carbide, cobalt, intercalation, silicides, density functional theory.
Received: 16.02.2021 Revised: 16.02.2021 Accepted: 18.02.2021
Citation:
S. M. Dunaevskii, E. Yu. Lobanova, E. K. Mikhailenko, I. I. Pronin, “Electronic structure of graphene on silicon carbide intercalated with silicon and cobalt atoms”, Fizika Tverdogo Tela, 63:6 (2021), 706–711; Phys. Solid State, 63:6 (2021), 819–824
Linking options:
https://www.mathnet.ru/eng/ftt8106 https://www.mathnet.ru/eng/ftt/v63/i6/p706
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