Abstract:
The electronic structure of a pure tungsten surface oxidized at an oxygen pressure of 1 Torr and a temperature of 1000 K has been in situ studied by photoelectron spectroscopy in ultrahigh vacuum. Photoemission spectra from the valence band and O 1s, O 2s, and W 4f core levels at synchrotron excitation in the photon energy range of 80–600 eV have been analyzed. A semiconductor tungsten oxide film is found to form, which contains different oxides of tungsten with the oxidation state from 6+ to 4+. Oxides of tungsten with the oxidation state of 6+ are mainly formed on the surface; their fraction gradually decreases while moving away from the surface, while the amount of oxides of tungsten with the oxidation state of 4+ increases.
This study was supported by the Russian Foundation for Basic Research, project no. 20-02-00370. The research project was supported by the Russian–German Laboratory at BESSY II.
Citation:
P. A. Dementev, E. V. Dementevа, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Electronic structure of thermally oxidized tungsten”, Fizika Tverdogo Tela, 63:8 (2021), 1166–1171; Phys. Solid State, 63 (2021), 1153–1158
This publication is cited in the following 1 articles:
Vassily Vadimovitch Burwitz, Annemarie Kärcher, Lucian Mathes, Alexander Book, Neelima Paul, Thomas Schwarz-Selinger, Maik Butterling, Eric Hirschmann, Maciej Oskar Liedke, Andreas Wagner, Elif Unsal, Gianaurelio Cuniberti, Christoph Hugenschmidt, “Tungsten oxide thin films probed by depth-resolved positron annihilation spectroscopy”, Phys. Rev. B, 111:5 (2025)