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Fizika Tverdogo Tela, 2021, Volume 63, Issue 8, Pages 1166–1171
DOI: https://doi.org/10.21883/FTT.2021.08.51173.065 (Mi ftt8079) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Surface physics, thin films

Electronic structure of thermally oxidized tungsten

P. A. Dementeva, E. V. Dementevаa, M. N. Lapushkina, D. A. Smirnovb, S. N. Timoshnevc

a Ioffe Institute, St. Petersburg, St. Petersburg, Russia
b Institut für Festkörper- und Materialphysik, Technische Universität Dresden, Dresden, Germany
c Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
Full-text PDF (245 kB) Citations (1)
DOI: https://doi.org/10.21883/FTT.2021.08.51173.065
Abstract: The electronic structure of a pure tungsten surface oxidized at an oxygen pressure of 1 Torr and a temperature of 1000 K has been in situ studied by photoelectron spectroscopy in ultrahigh vacuum. Photoemission spectra from the valence band and O 1$s$, O 2$s$, and W 4$f$ core levels at synchrotron excitation in the photon energy range of 80–600 eV have been analyzed. A semiconductor tungsten oxide film is found to form, which contains different oxides of tungsten with the oxidation state from 6+ to 4+. Oxides of tungsten with the oxidation state of 6+ are mainly formed on the surface; their fraction gradually decreases while moving away from the surface, while the amount of oxides of tungsten with the oxidation state of 4+ increases.
Keywords: tungsten oxidation, photoelectron spectroscopy.
Funding agency Grant number
Russian Foundation for Basic Research 20-02-00370
Russian-German Laboratory at BESSY II
This study was supported by the Russian Foundation for Basic Research, project no. 20-02-00370. The research project was supported by the Russian–German Laboratory at BESSY II.
Received: 25.03.2021
Revised: 30.03.2021
Accepted: 30.03.2021
English version:
Physics of the Solid State, 2021, Volume 63, Pages 1153–1158
DOI: https://doi.org/10.1134/S1063783421080072
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. A. Dementev, E. V. Dementevа, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Electronic structure of thermally oxidized tungsten”, Fizika Tverdogo Tela, 63:8 (2021), 1166–1171; Phys. Solid State, 63 (2021), 1153–1158
Citation in format AMSBIB
\Bibitem{DemDemLap21}
\by P.~A.~Dementev, E.~V.~Dementevа, M.~N.~Lapushkin, D.~A.~Smirnov, S.~N.~Timoshnev
\paper Electronic structure of thermally oxidized tungsten
\jour Fizika Tverdogo Tela
\yr 2021
\vol 63
\issue 8
\pages 1166--1171
\mathnet{http://mi.mathnet.ru/ftt8079}
\crossref{https://doi.org/10.21883/FTT.2021.08.51173.065}
\elib{https://elibrary.ru/item.asp?id=46345450}
\transl
\jour Phys. Solid State
\yr 2021
\vol 63
\pages 1153--1158
\crossref{https://doi.org/10.1134/S1063783421080072}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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