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Surface physics, thin films
Electronic structure of thermally oxidized tungsten
P. A. Dementeva, E. V. Dementevàa, M. N. Lapushkina, D. A. Smirnovb, S. N. Timoshnevc a Ioffe Institute, St. Petersburg, St. Petersburg, Russia
b Institut für Festkörper- und Materialphysik, Technische Universität Dresden, Dresden, Germany
c Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
Abstract:
The electronic structure of a pure tungsten surface oxidized at an oxygen pressure of 1 Torr and a temperature of 1000 K has been in situ studied by photoelectron spectroscopy in ultrahigh vacuum. Photoemission spectra from the valence band and O 1$s$, O 2$s$, and W 4$f$ core levels at synchrotron excitation in the photon energy range of 80–600 eV have been analyzed. A semiconductor tungsten oxide film is found to form, which contains different oxides of tungsten with the oxidation state from 6+ to 4+. Oxides of tungsten with the oxidation state of 6+ are mainly formed on the surface; their fraction gradually decreases while moving away from the surface, while the amount of oxides of tungsten with the oxidation state of 4+ increases.
Keywords:
tungsten oxidation, photoelectron spectroscopy.
Received: 25.03.2021 Revised: 30.03.2021 Accepted: 30.03.2021
Citation:
P. A. Dementev, E. V. Dementevà, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Electronic structure of thermally oxidized tungsten”, Fizika Tverdogo Tela, 63:8 (2021), 1166–1171; Phys. Solid State, 63 (2021), 1153–1158
Linking options:
https://www.mathnet.ru/eng/ftt8079 https://www.mathnet.ru/eng/ftt/v63/i8/p1166
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Abstract page: | 60 | Full-text PDF : | 21 |
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