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Fizika Tverdogo Tela, 2021, Volume 63, Issue 8, Pages 1146–1150
DOI: https://doi.org/10.21883/FTT.2021.08.51169.061
(Mi ftt8076)
 

This article is cited in 1 scientific paper (total in 1 paper)

Phase transitions

Electrical resistance and magnetoresistance of Cd$_{3}$As$_{2}$–30 mol.% MnAs under high pressure

L. A. Saypulaevaa, K. Sh. Khizrieva, N. V. Melnikovab, A. V. Tebenkovb, A. N. Babushkinb, V. S. Zakhvalinskiic, A. I. Rild, S. F. Marenkinde, M. M. Gadzhialieva, Z. Sh. Pirmagomedova

a Daghestan Institute of Physics after Amirkhanov, Makhachkala, Dagestan, Russia
b Institute of Natural Sciences and Mathematics, Ural Federal University, Yekaterinburg, Russia
c Belgorod National Research University, Belgorod, Russia
d Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, Russia
e National University of Science and Technology «MISIS», Moscow, Russia
Full-text PDF (571 kB) Citations (1)
Abstract: The paper presents the results of a study on the Electrical resistance and magneto-resistance (MR) of the composite, consisting of a Dirac semimetal Cd$_{3}$As$_{2}$ and 30 mol.% ferromagnetic dopand MnAs at pressure values up to 50 GPa. In the pressure range of 16–50 GPa, a hysteresis behavior of the transport properties was observed during a cycle of application and release of a pressure. Measurements on MR in the pressure rise and release mode revealed the features in the form of maxima of negative and positive MR, when the relative magneto-resistance $(\Delta R/R_0)$ reached $\sim$ 20% and $\sim$ 5.3% for negative and positive values respectively. An instability of the monoclinic structure of Cd$_{3}$As$_{2}$ as a result of its partial decomposition during decompression has been established.
Keywords: high pressure, composite, electrical resistivity, negative magnetoresistance, structural phase transition.
Received: 24.01.2021
Revised: 30.03.2021
Accepted: 30.03.2021
English version:
Physics of the Solid State, 2021, Volume 63, Issue 8, Pages 1301–1304
DOI: https://doi.org/10.1134/S1063783421080266
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: L. A. Saypulaeva, K. Sh. Khizriev, N. V. Melnikova, A. V. Tebenkov, A. N. Babushkin, V. S. Zakhvalinskii, A. I. Ril, S. F. Marenkin, M. M. Gadzhialiev, Z. Sh. Pirmagomedov, “Electrical resistance and magnetoresistance of Cd$_{3}$As$_{2}$–30 mol.% MnAs under high pressure”, Fizika Tverdogo Tela, 63:8 (2021), 1146–1150; Phys. Solid State, 63:8 (2021), 1301–1304
Citation in format AMSBIB
\Bibitem{SayKhiMel21}
\by L.~A.~Saypulaeva, K.~Sh.~Khizriev, N.~V.~Melnikova, A.~V.~Tebenkov, A.~N.~Babushkin, V.~S.~Zakhvalinskii, A.~I.~Ril, S.~F.~Marenkin, M.~M.~Gadzhialiev, Z.~Sh.~Pirmagomedov
\paper Electrical resistance and magnetoresistance of Cd$_{3}$As$_{2}$--30 mol.\% MnAs under high pressure
\jour Fizika Tverdogo Tela
\yr 2021
\vol 63
\issue 8
\pages 1146--1150
\mathnet{http://mi.mathnet.ru/ftt8076}
\crossref{https://doi.org/10.21883/FTT.2021.08.51169.061}
\elib{https://elibrary.ru/item.asp?id=46345447}
\transl
\jour Phys. Solid State
\yr 2021
\vol 63
\issue 8
\pages 1301--1304
\crossref{https://doi.org/10.1134/S1063783421080266}
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  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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