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This article is cited in 2 scientific papers (total in 2 papers)
Semiconductors
The charge transport mechanism in a new magnetic topological insulator MnBi$_{0.5}$Sb$_{1.5}$Te$_{4}$
N. A. Abdullaevab, Kh. V. Aliguliyevaac, V. N. Zverevd, Z. S. Aliyevae, I. R. Amireslanovab, M. B. Babanlybf, Z. A. Jahangirliab, E. N. Aliyevaa, Kh. N. Akhmedovaae, T. G. Mamedova, M. M. Otrokovgh, A. M. Shikini, N. T. Mamedova, E. V. Chulkovij a Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
b Baku State University, Baku, Azerbaijan
c Sumqayit State University, Sumgait, Azerbaijan
d Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia
e Azerbaijan State University of Oil and Industry, Baku, Azerbaijan
f Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, Baku, Azerbaijan
g Centro de Fisica de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastian, Basque Country, Spain
h IKERBASQUE, Basque Foundation for Science, Bilbao, Spain
i Saint Petersburg State University, St. Petersburg, Russia
j Dpto. de Polímeros y Materiales Avanzados: Física, Química y Tecnología, Facultad de Ciencias Químicas, Aptdo. 1072, Donostia-San Sebastían, Basque Country, Spain
Abstract:
A new layered magnetic topological insulator with the composition MnBi$_{0.5}$Sb$_{1.5}$Te$_{4}$ is obtained. The electrical conductivity in the plane of the layers and in the direction normal to the layers is studied in the range of temperatures of 1.4 – 300 K. It is found that a “metallic” character of the temperature dependence of the resistivity $\rho(T)$ is observed in the range of temperatures of 50 – 300 K in both directions. Below $T$ = 50 K, the value of $\rho$ increases and demonstrates an uncommon temperature dependence with a characteristic feature in the region of the critical temperature $T_c$ = 23 K. The increase in the resistance in the temperature range of 50 – 23 K is determined by the spin fluctuations and magnetic phase transition. Below $T_c$ and down to 1.4 K, $\rho(T)$ demonstrates a behavior characteristic for the weak localization effect, which is confirmed by the analysis of the data obtained when studying magnetoresistance.
Keywords:
topological insulators, resistivity, phase transitions, weak localization, magnetoresistance, layered crystals.
Received: 13.04.2021 Revised: 13.04.2021 Accepted: 18.04.2021
Citation:
N. A. Abdullaev, Kh. V. Aliguliyeva, V. N. Zverev, Z. S. Aliyev, I. R. Amireslanov, M. B. Babanly, Z. A. Jahangirli, E. N. Aliyeva, Kh. N. Akhmedova, T. G. Mamedov, M. M. Otrokov, A. M. Shikin, N. T. Mamedov, E. V. Chulkov, “The charge transport mechanism in a new magnetic topological insulator MnBi$_{0.5}$Sb$_{1.5}$Te$_{4}$”, Fizika Tverdogo Tela, 63:8 (2021), 1062–1067; Phys. Solid State, 63:7 (2021), 1120–1125
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https://www.mathnet.ru/eng/ftt8064 https://www.mathnet.ru/eng/ftt/v63/i8/p1062
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