Temperature dependence of the voltage induced by spin current in a manganite–iridate heterostructure

The temperature dependence of the voltage induced by the spin current was studied in an epitaxial thin-film La$_{0.7}$Sr$_{0.3}$MnO$_{3}$/SrIrO$_{3}$ heterostructure deposited on a single-crystal NdGaO$_{3}$ substrate. The spin current was generated by microwave pumping under conditions of ferromagnetic resonance in the La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ ferromagnetic layer and was detected in the SrIrO$_{3}$ layer due to inverse spin Hall effect. A significant increase of half-width of the spin current spectrum along with the rise of amplitude of the spin current upon cooling from room temperature (300 K) to 135 K were observed.