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Fizika Tverdogo Tela, 2021, Volume 63, Issue 10, Pages 1675–1679
DOI: https://doi.org/10.21883/FTT.2021.10.51459.124 (Mi ftt8007) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Low dimensional systems

Atomic mobility in the crystalline phase of a nanostructured Ga–In alloy with the $\beta$-Ga structure

D. Yu. Nefedova, E. V. Charnayaa, A. V. Uskova, A. O. Antonenkoa, D. Yu. Podorozhkina, Yu. A. Kumzerovb, A. V. Fokinb

a Saint Petersburg State University, St. Petersburg, Russia
b Ioffe Institute, St. Petersburg, Russia
Full-text PDF (237 kB) Citations (1)
DOI: https://doi.org/10.21883/FTT.2021.10.51459.124
Abstract: Eutectic gallium–indium alloy is a promising material for modern microelectronics, medical diagnostics, and flexible robotics. Investigations of the influence of a decrease in the sizes on the properties of the Ga–In alloy are of great interest in view of its novel ranges of applications. In this study, the atomic mobility in the segregated gallium-enriched crystalline phase of a nanostructured Ga–In alloy has been analyzed by NMR. The alloy with a composition of 94 at.% Ga and 6 at.% In has been introduced into pores of an opal matrix. It is shown that the gallium-enriched phase had a $\beta$-Ga structure. The temperature dependence of the nuclear spin–lattice relaxation rate of gallium has been measured. Contributions from the magnetic dipole and electrical quadrupole mechanisms of relaxation are separated. Temperature dependence of the atomic motion correlation time is calculated and the activation energy is estimated.
Keywords: Ga–In alloy, nanoconfinement in opal, segregated phase with $\beta$-Ga structure, NMR, gallium spin–lattice relaxation, atomic mobility.
Funding agency Grant number
Russian Science Foundation 21-72-20038
This study was supported by the Russian Science Foundation, grant no. 21-72-20038.
Received: 25.05.2021
Revised: 25.05.2021
Accepted: 09.06.2021
English version:
Physics of the Solid State, 2021, Volume 63, Issue 12, Pages 1739–1743
DOI: https://doi.org/10.1134/S1063783421100279
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. Yu. Nefedov, E. V. Charnaya, A. V. Uskov, A. O. Antonenko, D. Yu. Podorozhkin, Yu. A. Kumzerov, A. V. Fokin, “Atomic mobility in the crystalline phase of a nanostructured Ga–In alloy with the $\beta$-Ga structure”, Fizika Tverdogo Tela, 63:10 (2021), 1675–1679; Phys. Solid State, 63:12 (2021), 1739–1743
Citation in format AMSBIB
\Bibitem{NefChaUsk21}
\by D.~Yu.~Nefedov, E.~V.~Charnaya, A.~V.~Uskov, A.~O.~Antonenko, D.~Yu.~Podorozhkin, Yu.~A.~Kumzerov, A.~V.~Fokin
\paper Atomic mobility in the crystalline phase of a nanostructured Ga--In alloy with the $\beta$-Ga structure
\jour Fizika Tverdogo Tela
\yr 2021
\vol 63
\issue 10
\pages 1675--1679
\mathnet{http://mi.mathnet.ru/ftt8007}
\crossref{https://doi.org/10.21883/FTT.2021.10.51459.124}
\elib{https://elibrary.ru/item.asp?id=46598589}
\transl
\jour Phys. Solid State
\yr 2021
\vol 63
\issue 12
\pages 1739--1743
\crossref{https://doi.org/10.1134/S1063783421100279}
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