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Continued publication of the materials of the seminar in FTT N 12/21
Ferroelectricity
The influence of the PZT buffer layer on electrophysical properties of MDM structures with the BST film
S. M. Afanas'eva, D. A. Belorusova, D. A. Kiselevab, A. A. Sivova, G. V. Chuchevaa a Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences, Fryazino, Moscow oblast, Russia
b National University of Science and Technology «MISIS», Moscow, Russia
Abstract:
Films of the composition Ba0.8Sr0.2TiO3 (BST) were synthesized by the method of high-frequency (HF) sputtering on the buffer layer of a ferroelectric film of the composition PbZrxTi1−xO3 (PZT). Comparative results of electrophysical properties of three different metal-dielectric-metal (MDM)-structures are presented: Pt/BST/Ni, Pt/PZT/Ni, and Pt/PZT-BST/Ni.
Keywords:
metal-dielectric-metal structures, ferroelectric films of composition Ba0.8Sr0.2TiO3, a buffer layer, electrophysical properties.
Received: 05.07.2021 Revised: 05.07.2021 Accepted: 07.07.2021
Citation:
S. M. Afanas'ev, D. A. Belorusov, D. A. Kiselev, A. A. Sivov, G. V. Chucheva, “The influence of the PZT buffer layer on electrophysical properties of MDM structures with the BST film”, Fizika Tverdogo Tela, 63:11 (2021), 1895–1900
Linking options:
https://www.mathnet.ru/eng/ftt7965 https://www.mathnet.ru/eng/ftt/v63/i11/p1895
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Statistics & downloads: |
Abstract page: | 75 | Full-text PDF : | 35 |
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