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Shift of fundamental absorption edge in heavily doped semiconductor film
R. R. Guseinov Institute of Physics Azerbaijan Academy of Sciences
Received: 03.01.1985 Revised: 16.05.1985
Citation:
R. R. Guseinov, “Shift of fundamental absorption edge in heavily doped semiconductor film”, Fizika Tverdogo Tela, 28:1 (1986), 43–49
Linking options:
https://www.mathnet.ru/eng/ftt7 https://www.mathnet.ru/eng/ftt/v28/i1/p43
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Statistics & downloads: |
Abstract page: | 43 | Full-text PDF : | 21 |
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