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Effect of $\mathrm{Ge}$ on the donor electron hopping rate in $\mathrm{Si}$–$\mathrm{Ge}$ solid solution
A. A. Bugai, V. M. Maksimenko, I. N. Nurutdinova, B. D. Shanina, V. M. Babich Institute of Semiconductors of the Academy of Sciences of the Ukrainian SSR
Received: 16.04.1990 Revised: 17.10.1990
Citation:
A. A. Bugai, V. M. Maksimenko, I. N. Nurutdinova, B. D. Shanina, V. M. Babich, “Effect of $\mathrm{Ge}$ on the donor electron hopping rate in $\mathrm{Si}$–$\mathrm{Ge}$ solid solution”, Fizika Tverdogo Tela, 33:3 (1991), 890–895
Linking options:
https://www.mathnet.ru/eng/ftt6739 https://www.mathnet.ru/eng/ftt/v33/i3/p890
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Statistics & downloads: |
Abstract page: | 49 | Full-text PDF : | 17 |
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