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Decay kinetics of excitons bound to isoelectronic traps in neutron-irradiated silicon
A. S. Kaminskii, A. N. Safonov, È. V. Lavrov Institute of Radio Engineering and Electronics, Academy of Sciences of the USSR
Received: 03.10.1990
Citation:
A. S. Kaminskii, A. N. Safonov, È. V. Lavrov, “Decay kinetics of excitons bound to isoelectronic traps in neutron-irradiated silicon”, Fizika Tverdogo Tela, 33:3 (1991), 859–867
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https://www.mathnet.ru/eng/ftt6735 https://www.mathnet.ru/eng/ftt/v33/i3/p859
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Abstract page: | 41 | Full-text PDF : | 17 |
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