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Peculiarities of the exciton luminescence lux-intensity characteristics of the $\mathrm{PbI}_{2}$ and $\mathrm{CdSe}$ direct-gap semiconductors under low-level excitation
M. S. Brodin, A. O. Gushcha, L. V. Taranenko, V. V. Tishchenko, V. N. Khotyantsev, S. G. Shevel' Institute of Physics of the Academy of Sciences of the Ukrainian SSR, Kiev
Received: 04.03.1986
Citation:
M. S. Brodin, A. O. Gushcha, L. V. Taranenko, V. V. Tishchenko, V. N. Khotyantsev, S. G. Shevel', “Peculiarities of the exciton luminescence lux-intensity characteristics of the $\mathrm{PbI}_{2}$ and $\mathrm{CdSe}$ direct-gap semiconductors under low-level excitation”, Fizika Tverdogo Tela, 28:10 (1986), 2950–2958
Linking options:
https://www.mathnet.ru/eng/ftt639 https://www.mathnet.ru/eng/ftt/v28/i10/p2950
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Abstract page: | 51 | Full-text PDF : | 25 |
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