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Fizika Tverdogo Tela, 1986, Volume 28, Issue 10, Pages 2950–2958 (Mi ftt639)  
Peculiarities of the exciton luminescence lux-intensity characteristics of the $\mathrm{PbI}_{2}$ and $\mathrm{CdSe}$ direct-gap semiconductors under low-level excitation

M. S. Brodin, A. O. Gushcha, L. V. Taranenko, V. V. Tishchenko, V. N. Khotyantsev, S. G. Shevel'

Institute of Physics of the Academy of Sciences of the Ukrainian SSR, Kiev
Full-text PDF (1199 kB)
Received: 04.03.1986
Bibliographic databases:
Document Type: Article
UDC: 537.311.322
Language: Russian
Citation: M. S. Brodin, A. O. Gushcha, L. V. Taranenko, V. V. Tishchenko, V. N. Khotyantsev, S. G. Shevel', “Peculiarities of the exciton luminescence lux-intensity characteristics of the $\mathrm{PbI}_{2}$ and $\mathrm{CdSe}$ direct-gap semiconductors under low-level excitation”, Fizika Tverdogo Tela, 28:10 (1986), 2950–2958
Citation in format AMSBIB
\Bibitem{BroGusTar86}
\by M.~S.~Brodin, A.~O.~Gushcha, L.~V.~Taranenko, V.~V.~Tishchenko, V.~N.~Khotyantsev, S.~G.~Shevel'
\paper Peculiarities of the exciton luminescence lux-intensity characteristics of the $\mathrm{PbI}_{2}$ and $\mathrm{CdSe}$ direct-gap semiconductors under low-level excitation
\jour Fizika Tverdogo Tela
\yr 1986
\vol 28
\issue 10
\pages 2950--2958
\mathnet{http://mi.mathnet.ru/ftt639}
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